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Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Li, Z. and Wang, L. and Jiu, L. and Bruckbauer, J. and Gong, Y. and Zhang, Y. and Bai, J. and Martin, R. W. and Wang, T. (2017) Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). ISSN 0003-6951

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Abstract

Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.