Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

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    Abstract

    This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.

    ORCID iDs

    Bejtka, K., Rizzi, F., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;
    • Item type:Conference or Workshop Item(Speech)
      ID code:9971
      Dates:
      Date
      Event
      2005
      Published
      Keywords:growth, fabrication, gaN-based structures, aluminium indium nitride insertion layers, microcavities, AlInN layer, post-growth processing, Physics
      Subjects:Science > Physics
      Department:Faculty of Science > Physics
      Faculty of Science > Physics > Institute of Photonics
      Depositing user: Strathprints Administrator
      Date deposited:29 Jul 2011 13:33
      Last modified:23 Sep 2021 02:27
      Related URLs:
      URI:https://strathprints.strath.ac.uk/id/eprint/9971
    CORE (COnnecting REpositories)