Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

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    Abstract

    This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.

    Author(s):Bejtka, K., Rizzi, F., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989 and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993
    Item type:Conference or Workshop Item(Speech)
    ID code:9971
    Keywords:growth, fabrication, gaN-based structures, aluminium indium nitride insertion layers, microcavities, AlInN layer, post-growth processing, Physics
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:29 Jul 2011 13:33
    Last modified:04 Oct 2019 03:40
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/9971
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