Processing of the n-face of GaN: thinning, etching and morphological control

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

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Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

ORCID iDs

Rizzi, F., Bejtka, K., Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Semond, F., Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;