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Stimulated emission and lasing in Cu(In,Ga)Se2 thin films

Svitsiankou, I E and Pavlovskii, V N and Lutsenko, EV and Yablonskii, G P and Mudryi, A V and Zhivulko, VD and Yakushev, M V and Martin, R W (2016) Stimulated emission and lasing in Cu(In,Ga)Se2 thin films. Journal of Physics D: Applied Physics, 49 (9). ISSN 0022-3727

Text (Svitsiankou-etal-AP2016-stimulated-emission-lasing-Cu(In,Ga)Se2-thin-films)
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Stimulated emission and lasing in Cu(In,Ga)Se 2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N 2 laser with power densities in the range from 2 to 100 kW cm − 2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm − 2 . A gain value of 94 cm − 1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm − 2