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Number of items: 120.

Article

Gleskova, Helena and Gupta, Swati and Sutta, Pavol (2013) Structural changes in vapour-assembled n-octylphosphonic acid monolayer with post-deposition annealing : correlation with bias-induced transistor instability. Organic Electronics, 14 (11). pp. 3000-3006. ISSN 1566-1199

Gupta, Swati and Sutta, Pavol and Lamprou, Dimitrios and Gleskova, Helena (2013) Effect of substrate temperature on vapor-phase self-assembly of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors. Organic Electronics, 14 (10). 2468–2475. ISSN 1566-1199

Gupta, Swati and Gleskova, Helena (2013) Optimizing the deposition rate of vacuum-grown n-octylphosphonic acid monolayer for low-voltage thin-film transistors. SID Symposium Digest of Technical Papers, 44 (Supple). pp. 135-138. ISSN 2168-0159

Chinnam, Krishna Chytanya and Gleskova, Helena (2013) Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors. Journal of Nanoscience and Nanotechnology, 13 (7). pp. 5182-5185. ISSN 1533-4880

Gupta, Swati and Gleskova, Helena (2013) Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors. Organic Electronics, 14 (1). pp. 354-361. ISSN 1566-1199

Chinnam, Krishna Chytanya and Gupta, Swati and Gleskova, Helena (2012) Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors. Journal of Non-Crystalline Solids, 358 (17). pp. 2512-2515. ISSN 0022-3093

Gleskova, Helena and Wagner, Sigurd (2008) Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils. Journal of Non-crystalline Solids, 354 (19-25). pp. 2627-2631. ISSN 0022-3093

Kattamis, Alex Z. and Cherenack, Kunigunde H. and Hekmatshoar, Bahman and Cheng, I. Chun and Gleskova, Helena and Sturm, James C. and Wagner, Sigard (2007) Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. IEEE Electron Device Letters, 28 (7). pp. 606-608.

Pincik, E. and Kobayashi, H. and Hajossy, R. and Gleskova, H. and Takahashi, M. and Jergel, M. and Brunner, R. and Ortega, L. and Kucera, M. and Kral, M. and Rusnak, J. (2007) On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation. Applied Surface Science, 253 (16). pp. 6697-6715. ISSN 0169-4332

Long, Ke and Cheng, I-Chun and Kattamis, Alexis and Gleskova, H. and Wagner, Sigurd and Sturm, James C. (2007) Amorphous silicon thin-film transistors made at 280ºC on clear plastic substrates by interfacial stress engineering. Journal of the Society for Information Display, 15 (3). pp. 167-176. ISSN 1071-0922

Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. and Stevenson, M. and Yu, G. and O'Regan, M. (2006) Active-matrix amorphous-silicon TFT arrays at 180ºC on clear plastic and glass substrates for organic light-emitting displays. IEEE Transactions on Electron Devices, 53 (8). pp. 1789-1796. ISSN 0018-9383

Gleskova, Helena and Cheng, I. Chun and Wagner, Sigurd and Sturm, James C. and Suo, Zhigang (2006) Mechanics of thin-film transistors and solar cells on flexible substrates. Solar Energy, 80 (6). pp. 687-693. ISSN 0038-092X

Gleskova, Helena and Cheng, I. Chun and Wagner, Sigurd and Suo, Zhigang (2006) Thermomechanical criteria for overlay alignment in flexible thin-film electronic circuits. Applied Physics Letters, 88 (1). 011905. ISSN 0003-6951

Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. (2006) Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C. IEEE Electron Device Letters, 27 (2). pp. 111-113.

Kral, M. and Bucek, A. and Gleskova, H. and Cernak, M. and Kobayashi, H. and Rusnak, J. and Zahoran, M. and Brunner, R. and Pincik, E. (2005) Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation. Acta Physica Slovaca, 55 (4). pp. 373-378. ISSN 0323-0465

Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, Sigurd (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338-340 (1 SPEC). pp. 732-735. ISSN 0022-3093

Hsu, Pai Hui Iris and Huang, M. and Gleskova, H. and Xi, Z. and Suo, Z. and Wagner, Sigurd and Sturm, James C. (2004) Effects of mechanical strain on TFTs on spherical domes. IEEE Transactions on Electron Devices, 51 (3). pp. 371-377. ISSN 0018-9383

Pincik, E. and Kobayashi, H. and Takahashi, M. and Fujiwara, N. and Brunner, R. and Gleskova, H. and Jergel, M. and Mullerova, J. and Kucera, M. and Falcony, C. and Ortega, L. and Rusnak, J. and Mikula, M. and Zahoran, M. and Jurani, R. and Kral, M. (2004) Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells. Applied Surface Science, 235 (3). pp. 351-363. ISSN 0169-4332

Wagner, Sigurd and Gleskova, Helena and Cheng, I. Chun and Wu, Ming (2003) Silicon for thin-film transistors. Thin Solid Films, 430 (1-2). pp. 15-19. ISSN 0040-6090

Pincik, E. and Kobayashi, H. and Gleskova, H. and Kucera, M. and Ortega, L. and Jergel, M. and Falcony, C. and Brunner, R. and Shimizu, T. and Nadazdy, V. and Zeman, M. and Mikula, M. and Kumeda, M. and van Swaaij, R. A. C. M. M. (2003) Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. Thin Solid Films, 433 (1-2). pp. 344-351. ISSN 0040-6090

Gleskova, H. and Wagner, S. and Soboyejo, W. and Suo, Z. (2002) Electrical response of amorphous silicon thin-film transistors under mechanical strain. Journal of Applied Physics, 92 (10). pp. 6224-6229. ISSN 0021-8979

Hsu, P. I. and Bhattacharya, R. and Gleskova, H. and Huang, M. and Xi, Z. and Suo, Z. and Wagner, S. and Sturm, J. C. (2002) Thin-film transistor circuits on large-area spherical surfaces. Applied Physics Letters, 81 (9). pp. 1723-1725. ISSN 0003-6951

Hsu, P. I. and Gleskova, H. and Huang, M. and Suo, Z. and Wagner, S. and Sturm, J. C. (2002) Amorphous Si TFTs on plastically deformed spherical domes. Journal of Non-crystalline Solids, 299-302 (Part 2). pp. 1355-1359. ISSN 0022-3093

Gleskova, H. and Wagner, S. (2002) Electrophotographically printed insulator. Materials Letters, 52. pp. 150-153. ISSN 0167-577X

Pincik, E. and Gleskova, H. and Mullerova, J. and Nadazdy, V. and Mraz, S. and Ortega, L. and Jergel, M. and Falcony, C. and Brunner, R. and Gmucova, K. and Zeman, M. and van Swaaij, R. A. C. M. M. and Kucera, M. and Jurani, R. and Zahoran, M. (2002) Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles. Vacuum, 67 (1). pp. 131-141. ISSN 0042-207X

Pincik, E. and Jergel, M. and Gleskova, H. and Brunner, R. and Mullerova, J. and Gmucova, K. (2001) On metastable properties of plasma treated amorphous Si:H thin films. Superficies y Vacio, 13. ISSN 1665-3521

Gleskova, H. and Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79 (20). pp. 3347-3349. ISSN 0003-6951

Gleskova, Helena and Wagner, Sigurd (2001) DC-gate-bias stressing of a-Si:H TFTs fabricated at 150ºC on polyimide foil. IEEE Transactions on Electron Devices, 48 (8). pp. 1667-1671. ISSN 0018-9383

Gleskova, H. and Wagner, S. and Gašparík, V. and Kováč, P. (2001) 150°C amorphous silicon thin-film transistor technology for polyimide substrates. Journal of the Electrochemical Society, 148 (7). G370-G374. ISSN 0013-4651

Gleskova, H. and Wagner, S. and Gašparík, V. and Kováč, P. (2001) Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates. Applied Surface Science, 175-176. pp. 12-16. ISSN 0169-4332

Pincik, E. and Jergel, M. and Gmucova, K. and Gleskova, Helena and Kucera, M. and Mullerova, J. and Brunel, M. and Mikula, M. (2000) Low-energy argon ion beam treatment of a-Si:H/Si structure. Applied Surface Science, 166 (1-4). pp. 61-66. ISSN 0169-4332

Gleskova, H. and Wagner, S. and Suo, Z. (2000) a-Si:H thin film transistors after very high strain. Journal of Non-Crystalline Solids, 266-269 B. pp. 1320-1324. ISSN 0022-3093

Suo, Z. and Ma, E. Y. and Gleskova, H. and Wagner, S. (1999) Mechanics of rollable and foldable film-on-foil electronics. Applied Physics Letters, 74 (8). pp. 1177-1179. ISSN 0003-6951

Gleskova, H. and Wagner, S. and Suo, Z. (1999) Failure resistance of amorphous silicon transistors under extreme in-plane strain. Applied Physics Letters, 75 (19). pp. 3011-3013. ISSN 0003-6951

Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475.

Branz, Howard M. and Asher, Sally and Gleskova, Helena and Wagner, Sigurd (1999) Light-induced D diffusion measurements in hydrogenated amorphous silicon : testing H metastability models. Physical Review B - Condensed Matter and Materials Physics, 59 (8). pp. 5513-5520. ISSN 0163-1829

Gleskova, H. and Wagner, S. and Suo, Z. (1998) a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C. MRS Online Proceedings Library, 508. pp. 73-78. ISSN 0272-9172

Gleskova, H. and Wagner, S. and Shen, D. S. (1998) Photoresist-free fabrication process for a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 227-230 (PART 2). pp. 1217-1220. ISSN 0022-3093

Zhang, Q. and Shen, D. and Gleskova, Helena and Wagner, S. (1998) Modeling of gate line delay in very large active matrix liquid crystal displays. IEEE Transactions on Electron Devices, 45 (1). pp. 343-345. ISSN 0018-9383

Gleskova, H. and Wagner, S. and Zhang, Q. and Shen, D. S. (1997) Via hole technology for thin-film transistor circuits. IEEE Electron Device Letters, 18 (11). pp. 523-525. ISSN 0741-3106

Gleskova, H. and Könenkamp, R. and Wagner, S. and Shen, D. S. (1996) Electrophotographically patterned thin-film silicon transistors. IEEE Electron Device Letters, 17 (6). pp. 264-266.

Wagner, S. and Gleskova, Helena and Nakata, J. (1996) Equilibration and stability in undoped amorphous silicon. Journal of Non-crystalline Solids, 198-200. pp. 407-414. ISSN 0022-3093

Conde, J.P. and Silva, M. and Chu, V. and Gleskova, Helena and Vasanth, K. and Wagner, S. and Shen, D. and Popovic, P. and Grebner, S. and Schwarz, R. (1996) In-plane photoconductivity in amorphous silicon doping multilayers. Philosophical Magazine B, 74 (4). pp. 331-347. ISSN 1364-2812

Branz, H. M. and Bullock, J. N. and Asher, S. and Gleskova, Helena and Wagner, S. (1996) On the lack of observable light-induced hydrogen diffusion near room temperature. Journal of Non-crystalline Solids, 198-200. pp. 441-444. ISSN 0022-3093

Gleskova, H. and Wagner, S. and Shen, D. S. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420.

Gleskova, Helena and Wagner, S. (1995) Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Journal of Non-crystalline Solids, 190 (1-2). pp. 157-162. ISSN 0022-3093

Gleskova, H. and Bullock, J. N. and Wagner, S. (1993) Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. Journal of Non-Crystalline Solids, 164-166 (PART 1). pp. 183-186. ISSN 0022-3093

Gleskova, Helena and Ilchenko, V. V. and Skryshevsky, V. A. and Strikha, V. I. (1993) CO2 laser annealing of Al/a-Si:H contact. Czechoslovak Journal of Physics, 43 (2). pp. 169-178. ISSN 0011-4626

Gleskova, H. and Morin, P. A. and Wagner, S. (1993) Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination. Applied Physics Letters, 62 (17). pp. 2063-2065. ISSN 0003-6951

Gleskova, Helena and Skryshevsky, V. A. and Bullock, J. N. and Wagner, S. and Stuchlik, J. (1993) Properties of Au/SiO2/a-Si:H solar cells with wet oxide. Materials Letters, 16 (6). pp. 305-308. ISSN 0167-577X

Skryshevsky, V. A. and Strikha, V. I. and Gleskova, Helena (1992) The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. Czechoslovak Journal of Physics, 42 (3). pp. 331-338. ISSN 0011-4626

Gleskova, Helena and Morin, P. A. and Bullock, J. N. and Wagner, S. (1992) Reversibility of the light-induced saturation and annealing of defects in a-Si:H. Materials Letters, 13 (4-5). pp. 279-283. ISSN 0167-577X

Book Section

Gleskova, H. and Cheng, I-Chun and Wagner, Sigurd and Suo, Zhigang (2009) Mechanical theory of the film-on-substrate-foil structure : curvature and overlay alignment in amorphous silicon thin-film devices fabricated on free-standing foil substrates. In: Flexible Electronics. Springer, pp. 29-51. ISBN 978-0-387-74362-2

Sturm, J. C. and Hsu, P. I. and Gleskova, Helena and Bhattacharya, R. and Wagner, S. (2006) Deformable electronic surfaces. In: Frontiers in electronics. Selected topics in electronics and systems, 41 . World Scientific, pp. 365-374. ISBN 9812568840

Wagner, Sigurd and Gleskova, Helena and Cheng, I. Chun and Sturm, James C. and Suo, Z. (2005) Mechanics of TFT technology on flexible substrates. In: Flexible Flat Panel Displays. John Wiley & Sons, England, pp. 263-282. ISBN 9780470870488

Long, K. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. (2004) Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications]. In: Device Research Conference - Conference Digest, DRC. 62nd Device Research Conference, June 21-23, 2004 . IEEE, pp. 89-90. ISBN 0780382846

Sarma, K. R. and Chanley, C. and Dodd, S. and Roush, J. and Schmidt, J. and Srdanov, G. and Stevenson, M. and Wessel, R. and Innocenzo, J. and Yu, G. and O'Regan, M. and MacDonald, W. A. and Eveson, R. and Long, K. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. (2003) Active matrix OLED using 150ºC a-Si TFT backplane built on flexible plastic substrate. In: Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), 5080 . SPIE, Bellingham, WA, pp. 180-191. ISBN 0819449393

Wagner, S. and Gleskova, Helena and Cheng, I. C. and Wu, M. (2003) Silicon for thin-film transistors. In: Proceedings of the Second International Conference on Cat-CVD (Hot-Wire CVD) Process. 2nd Int. Conf. on Hot-Wire CVD Process, Sept. 10-13, 2002, Denver, 430 . Elsevier, Amsterdam, pp. 1-6.

Wagner, S. and Gleskova, H. and Cheng, I-C. and Wu, M. (2002) Thin-film transistors and flexible electronics. In: Growth, characterization and electronic applications of Si-based thin films. Research Signpost, Kerala, India, pp. 1-14. ISBN 9788177361087

Pineik, E. and Jergel, M. and Gleskova, H. and Brunner, R. and Mullerova, J. and Gmucova, K. (2001) On metastable properties of plasma treated amorphous Si:H thin films. In: Book of abstracts. XXI Congreso Nacional held in Mazatlan, Sinaloa, Mexico, October 2001 . Sociedad Mexicana de Ciencia de Superficies Y Vacío A.C..

Wagner, S. and Gleskova, Helena and Sturm, J. C. and Suo, Z. (2000) Novel processing technology for microelectronics. In: Technology and applications of hydrogenated amorphous silicon. Materials Science, 37 . Springer, Berlin, Germany, pp. 222-251. ISBN 9783540657149

Kydd, P. H. and Jablonski, G. A. and Richard, D. L. and Gleskova, Helena (1997) PARAMOD metallization of circuit traces and microvias in photodefined dielectrics : Organic High Density Interconnect Structures (HDIS). In: Organic High Density Interconnect Structures (HDIS). Institute for Interconnecting and Packaging Electronic Circuits, pp. 174-180. ISBN 9781580985239

Patent

Gleskova, Helena (2011) Methods for forming an organic layer on a substrate. WO2013021149A3.

Forbes, C (2007) A method for pattern metallization of substrates. US2006007230.

Forbes, C (2006) A method for pattern metallization of substrates : application. WO2006094040.

Forbes, C (2005) A method for pattern metallization of substrates. H01L021/00.

Forbes, C (2005) Display assembly having flexible transistors on a flexible substrate. H01L029/04.

Forbes, C (2005) Display assembly having flexible transistors on a flexible substrate : patent application. 7H 05K A.

Forbes, C. (2004) Active-matrix thin-film transistor array backplane. H01L021/00.

Forbes, C. (2003) Active matrix thin-film transistor array backplane : patent application. 7C 09K 19/02 B.

Kydd, P. H. (2001) Material and method for printing high conductivity electrical conductors and other components of thin film transistor arrays. G01G 336.

Gleskova, Helena (2000) Electrophotographic patterning of thin-film circuits. US6080606.

Wagner, S. (1999) Printed insulators for active and passive electronic devices. WO9950889.

Proceedings Paper

Gupta, Swati and Chinnam, Krishna Chytanya and Zelzer, Mischa and Ulijn, Rein and Gleskova, Helena (2012) Optimizing pentacene growth in low-voltage organic thin-film transistors prepared by dry fabrication techniques. [Proceedings Paper]

Cheng, I. C. and Wagner, S. and Kattamis, A. Z. and Hekmatshoar, B. and Cherenack, K. H. and Gleskova, Helena and Sturm, J. C. (2007) Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. [Proceedings Paper]

Pincik, E. and Kobayashi, H. and Gleskova, Helena and Takahashi, M. and Jergel, M. and Brunner, R. and Ortega, L. and Kucera, M. and Rusnak, J. (2006) On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. [Proceedings Paper]

Pincik, E. and Kobayashi, H. and Brunner, R. and Gleskova, H. and Takahashi, M. and Mikula, M. (2006) Very thin and ultrathin oxide/a-Si:H structures and polycrystalline-Si MOS type of solar cells. [Proceedings Paper]

Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gao, Y. X. and Gleskova, H. and Wagner, S. and Sturm, J. C. (2005) High-temperature (250ºC) amorphous silicon TFTs on clear plastic substrates. [Proceedings Paper]

Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gleskova, Helena and Wagner, S. and Sturm, J. C. (2005) Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures. [Proceedings Paper]

Forbes, C. E. and Gelbman, A. and Turner, C. and Gleskova, H. and Wagner, S. (2004) Electrophotographic patterning of a flexible direct drive display. [Proceedings Paper]

Pincik, E. and Kobayashi, H. and Jurecka, S. and Jergel, M. and Gleskova, H. and Takahashi, M. and Brunner, R. and Fujiwara, N. and Mullerova, J. (2004) Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment. [Proceedings Paper]

Liu, S. and Lim, H. C. and Min, Qu and Federici, J. F. and Thomas, G. A. and Gleskova, H. and Wagner, S. (2004) Resistance to cracking of a stretchable semiconductor : speed of crack propagation for varying energy release rate. [Proceedings Paper]

Gleskova, H. and Wagner, S. (2003) Fabrication of thin-film transistors on polyimide foils. [Proceedings Paper]

Wagner, S. and Gleskova, H. and Hsu, P. I. and Sturm, J. C. and Suo, Z. (2003) Flexible and deformable silicon thin-film transistor backplanes. [Proceedings Paper]

Forbes, C. E. and Gelbman, A. and Turner, C. and Gleskova, H. and Wagner, S. (2002) A rugged conformable backplane fabricated with an a-Si:H TFT array on a polyimide substrate. [Proceedings Paper]

Gleskova, H. and Wagner, S. and Soboyejo, W. and Suo, Z. (2002) Effects of mechanical strain on amorphous silicon thin-film transistors. [Proceedings Paper]

Sturm, J. C. and Gleskova, H. and Jackson, T. N. and Fonash, S. J. and Wagner, S. (2002) Enabling technologies for plastic displays. [Proceedings Paper]

Pincik, E. and Falcony, C. and Gleskova, H. and Brunner, R. and Ortega, L. and Nadazdy, V. and Mullerova, J. and Gmucova, K. and Durny, R. (2002) On a transformation of a-Si:H surface due to very low-energy particle impacts to very thin insulating overlayer of device quality. [Proceedings Paper]

Pincik, E. and Gmucova, K. and Jergel, M. and Mullerova, J. and Gleskova, H. and Nadazdy, V. and van Swaaij, R. A. C. M. M. and Durny, R. and Brunner, R. and Zeman, M. and Kucera, M. and Ortega, L. and Zahoran, M. (2002) On interaction of RF plasmas and amorphous silicon. [Proceedings Paper]

Pincik, E. and Gleskova, H. and Zahoran, M. and Gmucova, K. and Jergel, M. and Falcony, C. and Ortega, L. and Brunner, R. and Holoubek, T. and Jurani, R. (2002) On interaction of low-energy particles with a-Si:H and a-SiGe:H thin films. [Proceedings Paper]

Pincik, E. and Kobayashi, H. and Gleskova, H. and Jergel, M. and Gmucova, K. and Brunner, R. and Falcony, C. and Zahoran, M. and Jurani, R. and Zeman, M. and Nadazdy, V. and van Swaaij, R. A. C. M. M. and Ortega, L. (2002) On structural properties of a-Si based semiconductors. [Proceedings Paper]

Pincik, E. and Kobayashi, H. and Gleskova, Helena and Kucera, M. and Ortega, L. and Jergel, M. and Falcony, C. and Brunner, R. (2002) Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. [Proceedings Paper]

Pincik, E. and Gmucova, K. and Jergel, M. and Falcony, C. and Gleskova, H. and Brunner, R. and Ortega, L. and Nadazdy, V. and Mullerova, J. and Durny, R. (2002) Research and development of the thin film layer systems used at the production of amorphous and heterojunction solar cells. [Proceedings Paper]

Wagner, S. and Gleskova, H. (2002) Silicon thin-film transistors on flexible foil substrates. [Proceedings Paper]

Gleskova, Helena and Wagner, S. (2001) Electrical stability of a-Si:H TFTs fabricated at 150ºC. [Proceedings Paper]

Pincik, E. and Gleskova, H. and Mullerova, J. and Mraz, S. and Jurani, R. and Zahoran, M. and Jergel, M. and Brunner, R. and Gmucova, K. and van Swaaij, R. A. C. M. M. and Zeman, M. and Kucera, M. (2001) Transformation of semiconductor surfaces due to low-energy particle impacts. [Proceedings Paper]

Sturm, J. C. and Hsu, P. I. and Miller, S. and Gleskova, H. and Darhuber, A. and Huang, M. and Wagner, S. and Troian, S. and Suo, Z. (2001) Three-dimensional electronic surfaces. [Proceedings Paper]

Sturm, J. C. and Hsu, P. I. and Huang, M. and Gleskova, H. and Miller, S. and Darhuber, A. and Wagner, S. and Suo, Z. and Troian, S. (2001) Technologies for large-area electronics on deformable substrates. [Proceedings Paper]

Gleskova, H. and Wagner, S. (2001) a-Si:H TFTs on polyimide foil : electrical performance under mechanical strain. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Gasparik, V. and Kovac, P. (2000) 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. [Proceedings Paper]

Wagner, S. and Gleskova, Helena (2000) Low temperature amorphous and nanocrystalline silicon technology for flat panel displays. [Proceedings Paper]

Pincik, E. and Kucera, M. and Mullerova, J. and Gleskova, Helena and Brunner, R. and Gmucova, K. and van Swaaij, R. A. C. M. M. and Zeman, M. and Jergel, M. and Tucoulou, R. (2000) Optical, structural and electrical properties of a-Si:H. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Suo, Z. (1999) Rugged a-Si:H TFTs on plastic substrates. [Proceedings Paper]

Wagner, S. and Gleskova, Helena and Ma, E.Y. and Suo, Z. (1999) Compliant substrates for thin-film transistor backplanes. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Suo, Z. (1998) a-Si:H TFTs made on polyimide foil by PECVD at 150ºC. [Proceedings Paper]

Wagner, S. and Ma, E.Y. and Gleskova, Helena and Suo, Z. (1998) Thin foil substrates for rugged and lightweight TFT backplanes. [Proceedings Paper]

Hong, C. M. and Gleskova, Helena and Wagner, S. (1997) Direct writing and lift-off patterning of copper lines at 200ºC maximum process temperature. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Shen, D. (1997) a-Si:H TFTs patterned using laser-printed toner. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Shen, D. (1997) Via hole addressed TFT and process for large-area a-Si:H electronics. [Proceedings Paper]

Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. [Proceedings Paper]

Gleskova, Helena and Ma, E.Y. and Wagner, S. and Shen, D. (1996) Flexible glass substrates with via holes for TFT backplanes. [Proceedings Paper]

Gleskova, Helena and Ma, E.Y. and Wagner, S. and Shen, D. (1996) A-Si:H TFT fabricated by electrophotographic printing. [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Shen, D. (1995) Electrophotographic patterning of a-Si:H. [Proceedings Paper]

Gleskova, Helena and Wagner, S. (1995) Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? [Proceedings Paper]

Gleskova, Helena and Wagner, S. and Shen, D. (1995) Electrophotographic patterning of a-Si:H. [Proceedings Paper]

Shen, D. and Gleskova, Helena and Wagner, S. (1995) Patterning of a-Si:H by laser printing. [Proceedings Paper]

Gleskova, Helena and Wagner, S. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. [Proceedings Paper]

Gleskova, Helena and Nakata, M. and Wagner, S. (1994) Comparison of dark and light-induced annealing of metastable defects in a-Si:H. [Proceedings Paper]

Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. [Proceedings Paper]

Gleskova, Helena and Morin, P. A. and Wagner, S. (1993) Annealing the defects in a-Si:H under illumination. [Proceedings Paper]

This list was generated on Tue Aug 19 19:40:24 2014 BST.