Picture water droplets

Developing mathematical theories of the physical world: Open Access research on fluid dynamics from Strathclyde

Strathprints makes available Open Access scholarly outputs by Strathclyde's Department of Mathematics & Statistics, where continuum mechanics and industrial mathematics is a specialism. Such research seeks to understand fluid dynamics, among many other related areas such as liquid crystals and droplet evaporation.

The Department of Mathematics & Statistics also demonstrates expertise in population modelling & epidemiology, stochastic analysis, applied analysis and scientific computing. Access world leading mathematical and statistical Open Access research!

Explore all Strathclyde Open Access research...

Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Chinnam, Krishna Chytanya and Gupta, Swati and Gleskova, Helena (2012) Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors. Journal of Non-Crystalline Solids, 358 (17). pp. 2512-2515. ISSN 0022-3093

[img]
Preview
PDF (Chinnam-etal-JNCS-2012-Alluminium-oxide-prepared-by-UV-ozone-exposure-for-low-voltage)
Chinnam_etal_JNCS_2012_Alluminium_oxide_prepared_by_UV_ozone_exposure_for_low_voltage.pdf
Accepted Author Manuscript
License: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 logo

Download (339kB) | Preview

Abstract

We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.