Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Chinnam, Krishna Chytanya and Gupta, Swati and Gleskova, Helena (2012) Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors. Journal of Non-Crystalline Solids, 358 (17). pp. 2512-2515. ISSN 0022-3093 (https://doi.org/10.1016/j.jnoncrysol.2012.01.016)

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Abstract

We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.

ORCID iDs

Chinnam, Krishna Chytanya, Gupta, Swati and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
CORE (COnnecting REpositories)