Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays
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Cheng, I. C. and Wagner, S. and Kattamis, A. Z. and Hekmatshoar, B. and Cherenack, K. H. and Gleskova, Helena and Sturm, J. C.; Chen, C. H. and Tsai, Y. S., eds. (2007) Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. In: IDMC ‘07. UNSPECIFIED, TWN, pp. 311-314.
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This chapter looks at amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays
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Cheng, I. C., Wagner, S., Kattamis, A. Z., Hekmatshoar, B., Cherenack, K. H., Gleskova, Helena
ORCID: https://orcid.org/0000-0001-7195-9639 and Sturm, J. C.;
Chen, C. H. and Tsai, Y. S.
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Item type: Book Section ID code: 33443 Dates: DateEvent2007PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 04 Nov 2011 16:43 Last modified: 22 Jan 2026 09:59 URI: https://strathprints.strath.ac.uk/id/eprint/33443
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