Electrophotographic patterning of a-Si:H

Gleskova, Helena and Wagner, S. and Shen, D.; (1995) Electrophotographic patterning of a-Si:H. In: Proceeding of the second international workshop on active-matrix LCDs. IEEE, USA, pp. 16-19. (https://doi.org/10.1109/AMLCD.1995.540950)

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

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• Item metadata

  Item type:	Book Section
  ID code:	33500
  Dates:	Date Event 1995 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	27 Sep 2011 15:52
  Last modified:	08 Apr 2024 12:48
  URI:	https://strathprints.strath.ac.uk/id/eprint/33500