Electrophotographic patterning of a-Si:H

Gleskova, Helena and Wagner, S. and Shen, D.; (1995) Electrophotographic patterning of a-Si:H. In: Proceeding of the second international workshop on active-matrix LCDs. IEEE, USA, pp. 16-19.

Full text not available in this repository.Request a copy from the Strathclyde author

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, S. and Shen, D.;