Low-voltage high-transconductance dinaphtho-[2,3-b:2',3'-f]thieno [3,2-b]thiophene (DNTT) transistors on polyethylene naphthalate (PEN) foils

Ishaku, Amayikai A. and Al Ruzaiqi, Afra and Gleskova, Helena (2019) Low-voltage high-transconductance dinaphtho-[2,3-b:2',3'-f]thieno [3,2-b]thiophene (DNTT) transistors on polyethylene naphthalate (PEN) foils. In: IEEE International Conference on Flexible and Printable Sensors and Systems, 2019-07-07 - 2019-07-10.

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    Abstract

    Low threshold voltage, high transconductance DNTT transistors (OTFTs) with interdigitated source/drain contacts can provide low-voltage transistor amplifiers with a.c. cut-off frequency in excess of 10 kHz [1], making them suitable for wearable sensors. This paper presents an in-depth study of the geometry of such transistors fabricated on PEN. Changes in channel width-to-length ratio W/L were achieved by varying the W from ~12 to ~18 mm and L from 20 to 50 μm, leading to W/L of ~300 to ~900. The OTFTs exhibit threshold voltage from −0.33 to −0.74 V, field-effect mobility from 0.17 to 0.42 cm2/V·s, on-current from 28 to 67 μA (at VGS = VDS = −2 V), off-current from 6×10-12 to 7×10-8 A, and subthreshold slope from 65 to 266 mV/decade. While the OTFTs exhibit large on-state drain current and a.c. transconductance, smaller L leads to a slightly reduced mobility. In addition, the OTFTs with the largest W of 18.23 mm possess the lowest off-state drain current and subthreshold slope.