Active-matrix amorphous-silicon TFT arrays at 180ºC on clear plastic and glass substrates for organic light-emitting displays
Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. and Stevenson, M. and Yu, G. and O'Regan, M. (2006) Active-matrix amorphous-silicon TFT arrays at 180ºC on clear plastic and glass substrates for organic light-emitting displays. IEEE Transactions on Electron Devices, 53 (8). pp. 1789-1796. ISSN 0018-9383 (https://doi.org/10.1109/TED.2006.878028)
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An amorphous-silicon thin-film transistor (TFT) process with a 180 °C maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 °C-350 °C. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m 2.
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Item type: Article ID code: 5196 Dates: DateEventAugust 2006PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Strathprints Administrator Date deposited: 18 Jan 2008 Last modified: 08 Apr 2024 16:05 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/5196