Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475. (https://doi.org/10.1109/55.784456)

Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Article
  ID code:	33408
  Dates:	Date Event 1 September 1999 Published
  Keywords:	silicon thin-film transistors , polyimide foil substrates, polymer films, Electrical Engineering. Electronics Nuclear Engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	12 Oct 2011 10:14
  Last modified:	01 Nov 2023 09:47
  Related URLs:	Scopus publication
  URI:	https://strathprints.strath.ac.uk/id/eprint/33408