Mechanics of thin-film transistors and solar cells on flexible substrates
Gleskova, Helena and Cheng, I. Chun and Wagner, Sigurd and Sturm, James C. and Suo, Zhigang (2006) Mechanics of thin-film transistors and solar cells on flexible substrates. Solar Energy, 80 (6). pp. 687-693. ISSN 0038-092X (https://doi.org/10.1016/j.solener.2005.10.010)
Full text not available in this repository.Request a copyAbstract
When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells respond differently to externally applied tensile strain. The elastic deformation of the transistor is correlated with small increase in the electron mobility. When the tensile strain reaches ~ 0.34%, crack formation starts and causes an abrupt change in the transistor performance. The performance of solar cells, on the other hand, does not change for tensile strain up to ~ 0.7%. At larger strain the short-circuit current, open-circuit voltage, fill factor, and the efficiency gradually decrease.
ORCID iDs
Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639, Cheng, I. Chun, Wagner, Sigurd, Sturm, James C. and Suo, Zhigang;-
-
Item type: Article ID code: 12703 Dates: DateEvent1 June 2006PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Strathprints Administrator Date deposited: 01 Dec 2011 18:13 Last modified: 05 Sep 2024 18:50 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/12703