Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors

Chinnam, Krishna Chytanya and Gleskova, Helena (2013) Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors. Journal of Nanoscience and Nanotechnology, 13 (7). pp. 5182-5185. ISSN 1533-4880

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Abstract

Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.

Creators(s): Chinnam, Krishna Chytanya and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
Item type:Article
ID code:45032
Keywords:heat treatment, aluminium oxide preparation, UV/ozone oxidation, thin-film transistors, organic, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering
Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
Department:Faculty of Engineering > Electronic and Electrical Engineering
Depositing user: Pure Administrator
Date deposited:01 Oct 2013 13:01
Last modified:02 Jul 2020 01:18
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URI:https://strathprints.strath.ac.uk/id/eprint/45032
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