Toward a practical model of a-Si:H defects in intensity-time-temperature space

Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S.; Hack, M. and Madan, A. and Matsuda, A. and Powell, M. and Schiff, E. A., eds. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. In: Amorphous silicon technology - 1994. MRS Symposium Proceedings, 336 . Materials Research Society, USA, pp. 165-170. ISBN 9781558992368

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Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space

ORCID iDs

Caputo, D., Bullock, J. N., Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, S.; Hack, M., Madan, A., Matsuda, A., Powell, M. and Schiff, E. A.