Toward a practical model of a-Si:H defects in intensity-time-temperature space

Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S.; Hack, M. and Madan, A. and Matsuda, A. and Powell, M. and Schiff, E. A., eds. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. In: Amorphous silicon technology - 1994. MRS Symposium Proceedings, 336 . Materials Research Society, USA, pp. 165-170. ISBN 9781558992368

Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33440
  Dates:	Date Event 4 November 1994 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	04 Nov 2011 16:15
  Last modified:	11 Nov 2024 14:44
  URI:	https://strathprints.strath.ac.uk/id/eprint/33440