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Open Access research which pushes advances in bionanotechnology

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SIPBS is a major research centre in Scotland focusing on 'new medicines', 'better medicines' and 'better use of medicines'. This includes the exploration of nanoparticles and nanomedicines within the wider research agenda of bionanotechnology, in which the tools of nanotechnology are applied to solve biological problems. At SIPBS multidisciplinary approaches are also pursued to improve bioscience understanding of novel therapeutic targets with the aim of developing therapeutic interventions and the investigation, development and manufacture of drug substances and products.

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Failure resistance of amorphous silicon transistors under extreme in-plane strain

Gleskova, H. and Wagner, S. and Suo, Z. (1999) Failure resistance of amorphous silicon transistors under extreme in-plane strain. Applied Physics Letters, 75 (19). pp. 3011-3013. ISSN 0003-6951

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Abstract

We have applied strain on thin-film transistors (TFTs) made of hydrogenated amorphous silicon on polyimide foil. In tension, the amorphous layers of the TFT fail by periodic cracks at a strain of ∼0.5%. In compression, the TFTs do not fail when strained by up to 2%, which is the highest value we can set controllably. The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion. While the tensile driving force is sufficient to overcome the resistance to crack formation, the compressive failure mechanism of delamination is not activated because of the large delamination length required between transistor layers and polymer substrate.