a-Si:H TFTs made on polyimide foil by PECVD at 150ºC

Gleskova, Helena and Wagner, S. and Suo, Z.; Fahlen, T. S. and Morozumi, S. and Parsons, G. N. and Seager, C. P. and Tsai, C. C., eds. (1998) a-Si:H TFTs made on polyimide foil by PECVD at 150ºC. In: Flat panel display materials - 1998. MRS Symposium Proceedings, 508 . Materials Research Society, USA, pp. 73-78. ISBN 9781558994140

Abstract

This chapter looks at a-Si:H TFTs made on polyimide foil by PECVD at 150ºC

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33433
  Dates:	Date Event 27 October 1998 Published
  Keywords:	a-Si:H TFT, polyimide foil, pecvd, 150-degrees-C, Electrical Engineering. Electronics Nuclear Engineering
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	04 Nov 2011 15:12
  Last modified:	18 Jan 2023 12:16
  URI:	https://strathprints.strath.ac.uk/id/eprint/33433