Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Gleskova, Helena and Wagner, S.; Lockwood, D. J., ed. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, CAN, pp. 2701-2704. ISBN 9810220219

Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

• Share and Export
  

  RDF+XMLBibTeXRIOXX2 XMLRDF+N-TriplesJSONDublin CoreAtomSimple MetadataReferMETSHTML CitationASCII CitationOpenURL ContextObjectEndNoteOpenURL ContextObject in SpanMODSMPEG-21 DIDLEP3 XMLData Cite XMLRIS (EndNote Online, Zotero, Ref manager, etc)RDF+N3Multiline CSV
• Item metadata

  Item type:	Book Section
  ID code:	33439
  Dates:	Date Event 1995 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	20 Jan 2012 09:48
  Last modified:	08 Apr 2024 12:47
  URI:	https://strathprints.strath.ac.uk/id/eprint/33439