Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Gleskova, Helena and Wagner, S.; Lockwood, D. J., ed. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, CAN, pp. 2701-2704. ISBN 9810220219

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Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, S.; Lockwood, D. J.