Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Gleskova, Helena and Wagner, S.; Lockwood, D. J., ed. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, CAN, pp. 2701-2704. ISBN 9810220219

Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

ORCID iDs

Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639

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• Item metadata

  Item type:	Book Section
  ID code:	33439
  Dates:	Date Event 1995 Published
  Keywords:	unified rate law, thermal, light-induced annealing , defects, a-Si:H, Electrical engineering. Electronics Nuclear engineering
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Engineering > Electronic and Electrical Engineering
  Depositing user:	Pure Administrator
  Date deposited:	20 Jan 2012 09:48
  Last modified:	25 Aug 2021 00:46
  URI:	https://strathprints.strath.ac.uk/id/eprint/33439