Unified rate law for the thermal and light-induced annealing of defects in a-Si:H
Gleskova, Helena and Wagner, S.; Lockwood, D. J., ed. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, CAN, pp. 2701-2704. ISBN 9810220219
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This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H
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Gleskova, Helena
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Item type: Book Section ID code: 33439 Dates: DateEvent1995PublishedKeywords: unified rate law, thermal, light-induced annealing , defects, a-Si:H, Electrical engineering. Electronics Nuclear engineering Subjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 20 Jan 2012 09:48 Last modified: 25 Aug 2021 00:46 URI: https://strathprints.strath.ac.uk/id/eprint/33439
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