Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment

Pincik, E. and Kobayashi, H. and Jurecka, S. and Jergel, M. and Gleskova, H. and Takahashi, M. and Brunner, R. and Fujiwara, N. and Mullerova, J.; Chu, J. and Lai, Z. and Wang, L. and Xu, S., eds. (2004) Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment. In: Proccedings of the fifth international conference on thin film physics and applications. SPIE--The International Society for Optical Engineering., CHN, pp. 481-488. ISBN 9780819457554

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Abstract

This chapter looks at the investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment

ORCID iDs

Pincik, E., Kobayashi, H., Jurecka, S., Jergel, M., Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Takahashi, M., Brunner, R., Fujiwara, N. and Mullerova, J.; Chu, J., Lai, Z., Wang, L. and Xu, S.