Field-effect mobility of amorphous silicon thin-film transistors under strain
Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, Sigurd (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338-340 (1 SPEC). pp. 732-735. ISSN 0022-3093
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We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.
Creators(s): |
Gleskova, H. ![]() | Item type: | Article |
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ID code: | 38023 |
Keywords: | silicon thin-film transistors , thin-film transistors , field-effect mobility, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics |
Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
Department: | Faculty of Engineering > Electronic and Electrical Engineering |
Depositing user: | Pure Administrator |
Date deposited: | 29 Feb 2012 16:00 |
Last modified: | 20 Jan 2021 18:02 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/38023 |
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