Field-effect mobility of amorphous silicon thin-film transistors under strain

Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, Sigurd (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338-340 (1 SPEC). pp. 732-735. ISSN 0022-3093

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Abstract

We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.

Creators(s): Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Hsu, P. I., Xi, Z., Sturm, J. C., Suo, Z. and Wagner, Sigurd;
Item type:Article
ID code:38023
Keywords:silicon thin-film transistors , thin-film transistors , field-effect mobility, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
Department:Faculty of Engineering > Electronic and Electrical Engineering
Depositing user: Pure Administrator
Date deposited:29 Feb 2012 16:00
Last modified:20 Jan 2021 18:02
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URI:https://strathprints.strath.ac.uk/id/eprint/38023
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