Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, Helena and Wagner, S.; Hack, M. and Madan, A. and Matsuda, A. and Powell, M. and Schiff, E. A., eds. (1995) Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? In: Amorphous silicon technology - 1995. MRS Symposium Proceedings, 377 . Materials Research Society, USA, pp. 343-348. ISBN 9781558992801

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Abstract

This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, S.; Hack, M., Madan, A., Matsuda, A., Powell, M. and Schiff, E. A.