Browse by Journal or other publication
2024
Zhang, Liang and Whyte, Colin G. and Donaldson, Craig R. and Ronald, Kevin and Cross, Adrian W. (2024) Feedhorn synthesis using a parameterized aperture field distribution. IEEE Electron Device Letters, 45 (2). pp. 252-255. ISSN 0741-3106
2021
Donaldson, Craig R. and Zhang, Liang and Harris, Michael and Beardsley, Matthew J. and Huggard, Peter G. and Whyte, Colin G. and Cross, Adrian W. and He, Wenlong (2021) 8-fold helically corrugated interaction region for high power gyroresonant THz sources. IEEE Electron Device Letters, 42 (10). pp. 1544-1547. ISSN 0741-3106
2018
Zhang, Liang and Donaldson, Craig R. and Cain, Peter and Cross, Adrian W. and He, Wenlong (2018) Amplification of frequency-swept signals in a W-band gyrotron travelling wave amplifier. IEEE Electron Device Letters. pp. 1-4. ISSN 0741-3106 (In Press)
Zhang, Liang and Donaldson, Craig R. and Cross, Adrian W. and He, Wenlong (2018) A pillbox window with impedance matching sections for a W-band gyro-TWA. IEEE Electron Device Letters. ISSN 0741-3106
Shu, Guoxiang and Yin, Huabi and Zhang, Liang and Zhao, Junping and Liu, Guo and Phelps, Alan and Cross, Adrian and He, Wenlong (2018) Demonstration of a planar W-band, kW-level extended interaction oscillator based on a pseudospark-sourced sheet electron beam. IEEE Electron Device Letters, 39 (3). pp. 432-435. ISSN 0741-3106
2007
Kattamis, Alex Z. and Cherenack, Kunigunde H. and Hekmatshoar, Bahman and Cheng, I. Chun and Gleskova, Helena and Sturm, James C. and Wagner, Sigard (2007) Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. IEEE Electron Device Letters, 28 (7). pp. 606-608.
2006
Long, K. and Kattamis, A. Z. and Cheng, I. C. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. (2006) Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C. IEEE Electron Device Letters, 27 (2). pp. 111-113.
2004
Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2004) High resolution 128x96 nitride microdisplay. IEEE Electron Device Letters, 25 (5). pp. 277-279. ISSN 0741-3106
1999
Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475.
1997
Gleskova, H. and Wagner, S. and Zhang, Q. and Shen, D. S. (1997) Via hole technology for thin-film transistor circuits. IEEE Electron Device Letters, 18 (11). pp. 523-525. ISSN 0741-3106
1996
Gleskova, H. and Könenkamp, R. and Wagner, S. and Shen, D. S. (1996) Electrophotographically patterned thin-film silicon transistors. IEEE Electron Device Letters, 17 (6). pp. 264-266.
1995
Gleskova, H. and Wagner, S. and Shen, D. S. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420.