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High resolution 128x96 nitride microdisplay

Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2004) High resolution 128x96 nitride microdisplay. IEEE Electron Device Letters, 25 (5). pp. 277-279. ISSN 0741-3106

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Abstract

Matrix-addressable arrays of InGaN micro-light-emitting diodes with 128 /spl times/ 96 pixels and a resolution of 1200 dpi have been fabricated using a novel "sloped sidewall" process. The devices have been fabricated on InGaN blue and green wafers, emitting light at the wavelengths of 468 and 508 nm, respectively. A simple circuit, which enables the display of an arrow pattern with /spl sim/60% of the pixels turned on, was used for device testing. At an injection current of 60 mA, the devices deliver 3.3 (blue) and 2.4 mW (green) of output power, corresponding to a luminance of more than 30 000 Cd/m/sup 2/. These high-brightness and highly versatile devices are certainly an attractive form of emissive micro-display.

Item type: Article
ID code: 5249
Keywords: III-V semiconductors, light emitting diodes, microdisplays, semiconductor device manufacture, semiconductor device testing, matrix-addressable arrays micro-light-emitting diodes nitride microdisplay sloped sidewall process, Optics. Light, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics > Institute of Photonics
Depositing user: Strathprints Administrator
Date deposited: 29 Jan 2008
Last modified: 06 Apr 2018 02:04
URI: https://strathprints.strath.ac.uk/id/eprint/5249
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