150°C amorphous silicon thin-film transistor technology for polyimide substrates

Gleskova, H. and Wagner, S. and Gašparík, V. and Kováč, P. (2001) 150°C amorphous silicon thin-film transistor technology for polyimide substrates. Journal of the Electrochemical Society, 148 (7). G370-G374. ISSN 0013-4651

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    Abstract

    We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s.

    ORCID iDs

    Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, S., Gašparík, V. and Kováč, P.;