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Cameron, D. and O'Donnell, K.P. and Edwards, P.R. and Peres, M. and Lorenz, K. and Kappers, M.J. and Boćkowski, M. (2020) Acceptor state anchoring in gallium nitride. Applied Physics Letters, 116 (10). 102105. ISSN 0003-6951

Brien, V. and Edwards, P.R. and Boulet, P. and O'Donnell, K.P. (2019) Room temperature cathodoluminescence quenching of Er3+ in AlNOEr. Journal of Luminescence, 205. pp. 97-101. ISSN 0022-2313

Edwards, Paul R. and O'Donnell, Kevin P. and Singh, Akhilesh K. and Cameron, Douglas and Lorenz, Katharina and Yamaga, Mitsuo and Leach, Jacob H. and Kappers, Menno J. and Boćkowski, Michal (2018) Hysteretic photochromic switching (HPS) in doubly doped GaN(Mg):Eu—a summary of recent results. Materials, 11 (10). 1800. ISSN 1996-1944

Katsikini, M. and Katchkanov, V. and Boulet, P. and Edwards, P. R. and O'Donnell, K. P. and Brien, V. (2018) Extended X-ray absorption fine structure study of Er bonding in AlNO:Erx films with x <= 3.6%. Journal of Applied Physics, 124 (8). 085705. ISSN 0021-8979

Singh, A K and O'Donnell, K P and Edwards, P R and Lorenz, K and Leach, J H and Boćkowski, M (2018) Eu-Mg defects and donor-acceptor pairs in GaN : photodissociation and the excitation transfer problem. Journal of Physics D: Applied Physics, 51 (6). 065106. ISSN 1361-6463

Singh, A. K. and O'Donnell, K. P. and Edwards, P. R. and Cameron, D. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. and Yamaga, M. and Prakash, R. (2017) Luminescence of Eu3+ in GaN(Mg, Eu): transitions from the 5D1 level. Applied Physics Letters, 111 (24). 241105. ISSN 0003-6951

Magalhães, S and Franco, N and Watson, I M and Martin, R W and O'Donnell, K P and Schenk, H P D and Tang, F and Sadler, T C and Kappers, M J and Oliver, R A and Monteiro, T and Martin, T L and Bagot, P A J and Moody, M P and Alves, E and Lorenz, K (2017) Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates. Journal of Physics D: Applied Physics, 50. 205107. ISSN 1361-6463

Singh, A. K. and O'Donnell, K. P. and Edwards, P. R. and Lorenz, K. and Kappers, M. J. and Bokowski, M. (2017) Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor. Scientific Reports, 7. 41982. ISSN 2045-2322

O'Donnell, K. P. and Edwards, P. R. and Yamaga, M. and Lorenz, K. and Kappers, M. J. and Boćkowski, M. (2016) Crystalfield symmetries of luminescent Eu3+ centers in GaN : the importance of the 5D0 to 7F1 transition. Applied Physics Letters, 108 (2). 022102. ISSN 0003-6951

Redondo-Cubero, A and Lorenz, K and Wendler, E and Magalhães, S and Alves, E and Carvalho, D and Ben, T and Morales, F M and García, R and O'Donnell, K P and Wetzel, C (2015) Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing. Nanotechnology, 26 (42). 425703. ISSN 0957-4484

Carvalho, Daniel and Morales, Francisco M. and Ben, Teresa and García, Rafael and Redondo-Cubero, Andrés and Alves, Eduardo and Lorenz, Katharina and Edwards, Paul R. and O'Donnell, Kevin P. and Wetzel, Christian (2015) Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs. Microscopy and Microanalysis, 21 (4). pp. 994-1005. ISSN 1431-9276

Yamaga, M and Watanabe, H and Kurahashi, M and O'Donnell, K P and Lorenz, K and Boćkowski, M (2015) Indirect excitation of Eu3+ in GaN codoped with Mg and Eu. Journal of Physics: Conference Series, 619 (1). 012025. ISSN 1742-6588

Sousa, Marco A. and Esteves, Teresa C. and Sedrine, Nabiha Ben and Rodrigues, Joana and Lourenço, Márcio B. and Redondo-Cubero, Andrés and Alves, Eduardo and O'Donnell, Kevin P. and Bockowski, Michal and Wetzel, Christian and Correia, Maria R. and Lorenz, Katharina and Monteiro, Teresa (2015) Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen. Scientific Reports, 5. 9703. ISSN 2045-2322

O'Donnell, K. P. (2015) The temperature dependence of the luminescence of rare-earth-doped semiconductors : 25 years after Favennec. Physica Status Solidi C, 12 (4-5). pp. 466-468. ISSN 1610-1642

Magalhães, S. and Watson, I. M. and Pereira, S. and Franco, N. and Tan, L. T. and Martin, R. W. and O'Donnell, K. P. and Alves, E. and Araújo, J. P. and Monteiro, T. and Lorenz, K. (2015) Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents. Journal of Physics D: Applied Physics, 48 (1). 015103. ISSN 1361-6463

Ben Sedrine, N. and Esteves, T. C. and Rodrigues, J. and Rino, L. and Correia, M. R. and Sequeira, M. C. and Neves, A. J. and Alves, E. and Boćkowski, M. and Edwards, P. R. and O'Donnell, K.P. and Lorenz, K. and Monteiro, T. (2015) Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. Scientific Reports, 5. 13739. ISSN 2045-2322

Edwards, Paul R. and Wallace, Michael J. and Kusch, Gunnar and Naresh-Kumar, Gunasekar and Bruckbauer, Jochen and Trager-Cowan, Carol and O'Donnell, Kevin P. and Martin, Robert W. (2014) Cathodoluminescence hyperspectral imaging of nitride semiconductors : introducing new variables. Microscopy and Microanalysis, 20 (S3). pp. 906-907. ISSN 1435-8115

Kachkanov, Vyacheslav V. and Leung, Benjamin B. and Song, Jie J. and Han, Jung J. and Zhang, Y. and Tsai, M.C. and Yuan, G. and Han, J. and O'Donnell, Kevin K. (2014) Structural dynamics of GaN microcrystals in evolutionary selection selective area growth probed by X-ray microdiffraction. Scientific Reports, 4. 4651. ISSN 2045-2322

O'Donnell, K.P. and Edwards, P.R. and Kappers, M.J. and Lorenz, K. and Alves, E.J. and Boćkowski, M.X. (2014) Europium-doped GaN(Mg) : beyond the limits of the light-emitting diode. Physica Status Solidi C, 11 (3-4). 662–665. ISSN 1610-1642

Miranda, S. M. C. and Edwards, P. R. and O'Donnell, K. P. and Boćkowski, M. and Alves, E. and Roqan, I. S. and Vantomme, A. and Lorenz, K. (2014) Sequential multiple-step europium ion implantation and annealing of GaN. Physica Status Solidi C, 11 (2). pp. 253-257. ISSN 1610-1642

Kachkanov, V. and Dobnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio Manuel De Sousa and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. Physica Status Solidi C, 10 (3). pp. 481-485. ISSN 1610-1642

Kachkanov, Vyacheslav V. and Wallace, M. J. M.J. and Van Der Laan, Gerrit G. and Dhesi, Sarnjeet S. S.S. and Cavill, Stuart A. S.A. and Fujiwara, Yasufumi Y. and O'Donnell, Kevin Peter K.P. (2012) Induced magnetic moment of Eu3+ ions in GaN. Scientific Reports, 2 (Decemb). 969. ISSN 2045-2322

Kachkanov, V. and Dolbnya, I. P. and O'Donnell, K. P. and Lorenz, K. and Pereira, S. and Martin, R. W. and Edwards, P. R. and Watson, I. M. (2012) Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping. MRS Online Proceedings Library, 1396. mrsf11-1396-o06-11.

O'Donnell, K. P. and Maur, M. Auf Der and Di Carlo, A. and Lorenz, K., SORBET Consortium (2012) It's not easy being green : strategies for all-nitrides, all-colour solid state lighting. Physica Status Solidi (RRL) - Rapid Research Letters, 6 (2). pp. 49-52. ISSN 1862-6254

O'Donnell, Kevin and Auf Der Maur, Matthias and Di Carlo, Aldo and Lorenz, Katharina (2012) It's not easy being green : strategies for all-nitrides, all-colour solid state lighting. Physica Status Solidi (RRL) - Rapid Research Letters, 6 (2). pp. 49-52. ISSN 1862-6254

O'Donnell, Kevin Peter K.P. (2012) Photoluminescence of Eu-doped GaN. MRS Online Proceedings Library, 1342. pp. 101-109. ISSN 0272-9172

O'Donnell, K. P. and Roqan, I. S. and Wang, Ke and Lorenz, K. and Alves, E. and Bockowski, M. (2011) The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN. Optical Materials, 33 (7). pp. 1063-1065.

Kachkanov, V. and Dolbnya, I.P. and O'Donnell, Kevin and Martin, Robert and Edwards, Paul and Pereira, S. (2011) InGaN epilayer characterization by microfocused x-ray reciprocal space mapping. Applied Physics Letters, 99 (18). 181909. ISSN 0003-6951

Kachkanov, V. and O'Donnell, K. P. and Rice, C. and Wolverson, D. and Martin, R. W. and Lorenz, K. and Alves, E. and Bockowski, M. (2011) Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN. MRS Online Proceedings Library, 1290. ISSN 1946-4274

Lorenz, K. and Alves, E. and Roqan, I. S. and O'Donnell, K. P. and Nishikawa, A. and Fujiwara, Y. and Bockowski, M. (2010) Lattice site location of optical centers in GaN : Eu light emitting diode material grown by organometallic vapor phase epitaxy. Applied Physics Letters, 97 (11). p. 111911. ISSN 0003-6951

Lorenz, K. and Magalhaes, S. and Franco, N. and Barradas, N. P. and Darakchieva, V. and Alves, E. and Pereira, S. and Correia, M. R. and Munnik, F. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. (2010) Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. Physica Status Solidi B, 247 (7). pp. 1740-1746. ISSN 0370-1972

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Edwards, P.R. and Song, S.F. and Vantomme, A. and Lorenz, K. and Alves, E. and Boćkowski, M. (2010) Identification of the prime optical center in GaN:Eu3+. Physical Review B, 81 (1). 085209. ISSN 1098-0121

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 083508. ISSN 0021-8979

Wang, K. and O'Donnell, K.P. and Hourahine, B. and Martin, R.W. and Watson, I.M. and Lorenz, K. and Alves, E. (2009) Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range. Physical Review B, 80 (12). 125206. ISSN 1098-0121

Lorenz, K. and Barradas, N.P. and Alves, E. and Roqan, I.S. and Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Gloux, F. and Ruterana, P. (2009) Structural and optical characterization of Eu-implanted GaN. Journal of Physics D: Applied Physics, 42 (16). 165103. ISSN 1361-6463

Lorenz, K. and Roqan, I.S. and Franco, N. and O'Donnell, K.P. and Darakchieva, V. and Alves, E. and Trager-Cowan, C. and Martin, R.W. and As, D.J. and Panfilova, M., Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder), HOYA Corporation (Funder), German Science Foundation (DFG) (Funder) (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). 113507. ISSN 0021-8979

Edwards, Paul and Martin, R.W. and Bejtka, K. and O'Donnell, K.P. and Fernandez-Garrido, S. and Calleja, E. (2009) Correlating composition and luminescence in AlInGaN epilayers. Superlattices and Microstructures, 45 (4-5). pp. 151-155.

Cusco, R. and Pastor, D. and Hernandez, S. and Artus, L. and Martinez, O. and Jimenez, J. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2008) Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. Semiconductor Science and Technology, 23 (10). 105002-1-105002-4. ISSN 0268-1242

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Roqan, I.S. and Nogales, E. and O'Donnell, K.P. and Trager-Cowan, C. and Martin, R.W. and Halambalakis, G. and Briot, O. (2008) The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. Journal of Crystal Growth, 310 (18). pp. 4069-4072. ISSN 0022-0248

Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). 073510. ISSN 0021-8979

Lorenz, K. and Alves, E. and Roqan, I.S. and Martin, R.W. and Trager-Cowan, C. and O'Donnell, K.P. and Watson, I.M. (2008) Rare earth doping of III-nitride alloys by ion implantation. Physica Status Solidi A, 205 (1). pp. 34-37. ISSN 1862-6300

Tan, L.-T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. and Wu, Z.H. and Ponce, F.A. (2008) Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 92 (3). 031907. ISSN 0003-6951

Roqan, I.S. and O'Donnell, K.P. and Trager-Cowan, C. and Hourahine, B. and Martin, R.W. and Lorenz, K. and Alves, E. and As, D.J. and Panfilova, M. and Watson, I.M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. Physica Status Solidi B, 245 (1). pp. 170-173. ISSN 0370-1972

de Sousa Pereira, Sergio Manuel and O'Donnell, Kevin Peter and da Costa Alves, Eduardo Jorge (2007) Role of nanoscale strain inhomogeneity on the light emission from InGaN epilayers. Advanced Functional Materials, 17 (1). pp. 37-42. ISSN 1616-301X

Kachkanov, V. and O'Donnell, K. P. and Pereira, S. and Martin, R. W. (2007) Localization of excitation in InGaN epilayers. Philosophical Magazine, 87 (13). pp. 1999-2017. ISSN 1478-6435

Roqan, I. S. and Lorenz, K. and O'Donnell, K. P. and Trager-Cowan, C. and Martin, R. W. and Watson, I. M. and Alves, E. (2006) Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN. Superlattices and Microstructures, 40 (4-6). pp. 445-451. ISSN 0749-6036

O'Donnell, K.P. and Hourahine, B. (2006) Rare earth doped III-nitrides for optoelectronics. European Physical Journal: Applied Physics, 36 (2). pp. 91-103. ISSN 1286-0042

Pastor, D. and Hernandez, S. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Briot, O. and Lorenz, K. and Alves, E. (2006) UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers. Superlattices and Microstructures, 40 (4-6). pp. 440-444. ISSN 0749-6036

Kachkanov, V. and O'Donnell, K. P. and Martin, R. W. and Mosselmans, J. F. W. and Pereira, S. (2006) Local structure of luminescent InGaN alloys. Applied Physics Letters, 89 (10). 101908. ISSN 0003-6951

Tan, L.T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2006) Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness. Applied Physics Letters, 89 (10). 101910. ISSN 0003-6951

Katchkanov, V and Mosselmans, J F W and O'Donnell, K P and Nogales, E and Hernandez, S and Martin, R W and Steckl, A and Lee, D S (2006) Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28 (6-7). pp. 785-789.

Lorenz, K. and Wahl, U. and Alves, E. and Nogales, E and Dalmasso, S and Martin, R W and O'Donnell, K P and Wojdak, M and Braud, A and Monteiro, T and Wojtowicz, T and Ruterana, P and Ruffenach, S and Briot, O (2006) High temperature annealing of rare earth implanted GaN films : structural and optical properties. Optical Materials, 28 (6-7). pp. 750-758.

Hernandez, S and Cusco, R and Artus, L and Nogales, E and Martin, R W and O'Donnell, K P and Halambalakis, G and Briot, O and Lorenz, K and Alves, E (2006) Lattice order in thulium-doped GaN epilayers : in situ doping versus ion implantation. Optical Materials, 28 (6-7). pp. 771-774.

Wang, K and Martin, RW and Nogales, E and Katchkanov, V and O'Donnell, KP and Hernandez, S and Lorenz, K and Alves, E and Ruffenach, S and Briot, O (2006) Optical properties of high-temperature annealed Eu-implanted GaN. Optical Materials, 28 (6-7). pp. 797-801.

Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2006) Failure mechanism of AlN nanocaps used to protect RE-implanted GaN during high temperature annealing. Applied Physics Letters, 88. p. 31902. ISSN 0003-6951

Lorenz, K. and Franco, N. and Alves, E. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2006) Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state. Physical Review Letters, 97. 085501. ISSN 1079-7114

Wang, K. and Martin, R.W. and Nogales, E. and Edwards, P.R. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Watson, I.M. (2006) Cathodoluminescence of rare earth implanted AlInN. Applied Physics Letters, 89 (13). 131912. ISSN 0003-6951

Lorenz, K. and Wahl, U. and Alves, E. and Dalmasso, S. and Martin, R.W. and O'Donnell, K.P. and Ruffenach, S. and Briot, O. (2005) High temperature annealing and optical activation of Eu implanted GaN. Applied Physics Letters, 85 (14). pp. 2712-2714. ISSN 0003-6951

Wang, K. and Martin, R.W. and O'Donnell, K.P. and Katchkanov, V. and Nogales, E. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu- implanted GaN. Applied Physics Letters, 87 (11). 112107. ISSN 0003-6951

Katchkanov, V and O'Donnell, KP and Dalmasso, S and Martin, RW and Braud, A and Nakanishi, Y and Wakahara, A and Yoshida, A (2005) Photoluminescence studies of Eu-implanted GaN epilayers. Physica Status Solidi B, 242 (7). pp. 1491-1496. ISSN 0370-1972

Katchkanov, V. and O'Donnell, K.P. and Mosselmans, J.F.W. and Hernandez, S. and Martin, R.W. and Nanishi, Y. and kurochi, M. and Watson, I.M. and van der Stricht, W. and Calleja, E. (2005) Extended x-ray absorption fine structure studies of InGaN epilayers. MRS Online Proceedings Library, 831. pp. 203-207. ISSN 0272-9172

Hernandez, S. and Cusco, R. and Pastor, D. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Calleja, E. (2005) Raman-scattering study of the InGaN alloy over the whole composition range. Journal of Applied Physics, 98. 013511-03515. ISSN 0021-8979

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Cusco, R. and Pastor, D. and Artus, L. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2005) Structural and optical properties of MOCVD AllnN epilayers. MRS Online Proceedings Library, 388-393 (6). pp. 388-393. ISSN 0272-9172

O'Donnell, K.P. and Katchkanov, V. and Wang, K. and Martin, R.W. and Hourahine, B. and Edwards, P.R. and Nogales, E. and Mosselmans, J.F.W. and De-Vries, B. (2004) Site multiplicity of rare earth ions in III-nitrides. MRS Online Proceedings Library, 831. pp. 527-535. ISSN 0272-9172

O'Donnell, K P and Fernandez-Torrente, I and Edwards, P R and Martin, R W (2004) The composition dependence of the InxGa1-xN bandgap. Journal of Crystal Growth, 269 (1). pp. 100-105. ISSN 0022-0248

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Dawson, M.D. and Jeon, C.W. and Liu, C. and Rice, G.R. and Watson, I.M. (2004) Cathodoluminescence spectral mapping of III-nitride structures. Physica Status Solidi A - Applications and Materials Science, 201 (4). pp. 665-672.

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. E3.22. ISSN 0272-9172

Halambalakis, G and Rousseau, N and Briot, O and Ruffenach, S and Aulombard, R L and Edwards, P R and O'Donnell, K P and Wojtowicz, T and Ruterana, P (2004) Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures, 36 (4-6). pp. 721-728.

Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Shvartsman, V.V. and Kholkin, A.L. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. and Mayer, M. (2004) Roughness in gaN/InGaN films and multilayers determined with Rutherford backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (3). pp. 479-497. ISSN 0168-583X

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaN epilayers. Physica Status Solidi C (7). pp. 2474-2477. ISSN 1610-1642

O'Donnell, K P and Pereira, S and Martin, R W and Edwards, P R and Tobin, M J and Mosselmans, J F W (2003) Wishful physics: Some common misconceptions about InGaN. Physica Status Solidi A - Applications and Materials Science, 195 (3). pp. 532-536.

Dalmasso, S and Martin, R W and Edwards, P R and O'Donnell, K P and Pipeleers, B and Vantomme, A and Nakanishi, Y and Wakahara, A and Yoshida, A, RENiBEI Network (2003) Electron probe microanalysis of rare earth doped gallium nitride light emitters. Journal of Physics: Conference Series, 180. pp. 555-558. ISSN 1742-6596

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition and cathodoluminescence spectral mapping of III-nitride structures. Journal of Physics: Conference Series (180). pp. 293-296. ISSN 1742-6596

Trager-Cowan, C. and Sweeney, F. and Wilkinson, A.J. and Watson, I.M. and Middleton, P.G. and O'Donnell, K.P. and Zubia, D. and Hersee, S.D. and Einfeldt, S. and Hommel, D. (2002) Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence. Physica Status Solidi C (1). pp. 532-536. ISSN 1610-1642

Martin, R W and O'Donnell, K P and Edwards, P R (2002) Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]. Applied Physics Letters, 81 (16). 3100. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Mackay, E.G. and Watson, I.M. (2002) Microcomposition and luminescence of InGaN emitters. Physica Status Solidi A, 192 (1). pp. 117-123. ISSN 1862-6300

PEREIRA, SERGIO MANUEL DE SOUSA and Correia, M.R. and Pereira, Eduarda and Trager-Cowan, Carol and Sweeney, Francis and O'Donnell, Kevin and Alves, E. and Franco, N. and Sequeira, A.D. (2002) Structural and optical properties of InGaN/GaN layers close to the critical layer thickness. Applied Physics Letters, 81 (7). p. 1207.

White, M.E. and O'Donnell, K.P. and Martin, R.W. and Pereira, S. and Deatcher, C.J. and Watson, I.M. (2002) Photoluminescence excitation spectroscopy of ingan epilayers. Materials Science and Engineering B, 93 (1-3). pp. 147-149. ISSN 0921-5107

Pereira, S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. and Deatcher, C.J. (2002) Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping. Applied Physics Letters, 80 (21). pp. 3913-3915. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Liu, C. and Deatcher, C.J. and Watson, I.M. and O'Donnell, K.P. (2002) Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. Journal of Physics D: Applied Physics, 35 (7). pp. 604-608. ISSN 1361-6463

Trager-Cowan, C. and Sweeney, F. and Hastie, J. and Manson-Smith, S.K. and Cowan, D.A. and McColl, D. and Mohammed, A. and O'Donnell, K.P. and Zubia, D. and Hersee, S.D. and Foxon, C.T. and Harrison, I. and Novikov, S.V. (2002) Characterisation of nitride thin films by EBSD. Journal of Microscopy, 205 (3). pp. 226-230. ISSN 0022-2720

Pereira, S.M.D.S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Barradas, N.P. and Sequeira, A.D. and Watson, I.M. and Liu, C. (2002) Degradation of structural and optical properties of InGaN/GaN multiple quantum wells. Journal of Applied Physics, 105. pp. 302-306. 063105. ISSN 0021-8979

Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Alves, E. and Barradas, N.P. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. (2002) Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. Applied Physics Letters, 81 (16). pp. 2950-2952. ISSN 0003-6951

Manson-Smith, S.K. and Trager-Cowan, C. and O'Donnell, K.P. (2001) Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions. Physica Status Solidi B, 228 (2). 445 -448. ISSN 0370-1972

Pereira, S.M.D.S. and Correia, M.R. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Trager-Cowan, C. and Sweeney, F. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. (2001) Depth resolved studies of indium content and strain in InGaN layers. Physica Status Solidi B, 228 (1). pp. 59-64. ISSN 0370-1972

O'Donnell, K.P. and Mosselmans, J.F.W. and Martin, R.W. and Pereira, S. and White, M.E. (2001) Structural analysis of InGaN epilayers. Journal of Physics: Condensed Matter, 13 (32). pp. 6977-6991. ISSN 0953-8984

O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and White, M.E. (2001) The dependence of the optical energies on InGaN composition. Materials Science and Engineering B, 82 (1-3). pp. 194-196. ISSN 0921-5107

O'Donnell, K.P. and Martin, R.W. and White, M.E. and Tobin, M.J. and Mosselmans, J.F.W. and Watson, I.M. and Damiliano, B. and Grandjean, N. (2001) Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation. MRS Online Proceedings Library, 639. G9.11. ISSN 0272-9172

Kuznetsov, P I and Shchamkhalova, B S and Jitov, V A and Yakushcheva, G G and Kozlovsky, V I and O'Donnell, K P and Trager-Cowan, C and Edwards, P R (2001) MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL. Physics of Low-Dimensional Structures, 11 (2). pp. 271-278. ISSN 0204-3467

Book Section

O'Donnell, K. P. and Martin, R. W. and Edwards, P. R. and Lorenz, K. and Alves, E. and Bockowski, M.; Ihn, Thomas and Rössler, Clemens and Kozikov, Aleksey, eds. (2013) Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN. In: The Physics of Semiconductors. AIP Conference Proceedings. ISBN 9780735411944

Lorenz, Katharina K. and Miranda, S. M C S.M.C. and Alves, E. Jorge E.J. and Roqan, Iman S. I.S. and O'Donnell, Kevin Peter K.P. and Boćkowski, Michał X. M.X.; (2012) High pressure annealing of Europium implanted GaN. In: Proceedings of SPIE - The International Society for Optical Engineering. SPIE, pp. 82-87.

O'Donnell, Kevin; O'Donnell, Kevin and Dierolf, Volkmar, eds. (2010) Summary and prospects for future work. In: Rare-earth doped III-nitrides for optoelectronic and spintronic applications. Topics in applied physics . Springer, pp. 343-345. ISBN 9789048128761

Conference or Workshop Item

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Pastor, D. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. and Network, RENiBE1; Kuball, M and Myers, TH and Redwing, JM and Mukai, T, eds. (2006) Structural and optical properties of MOCVD InAlN epilayers. In: Symposium on GaN, AIN, InN Related Materials, 2005-11-28 - 2005-12-02.