Acceptor state anchoring in gallium nitride
Cameron, D. and O'Donnell, K.P. and Edwards, P.R. and Peres, M. and Lorenz, K. and Kappers, M.J. and Boćkowski, M. (2020) Acceptor state anchoring in gallium nitride. Applied Physics Letters, 116 (10). 102105. ISSN 0003-6951 (https://doi.org/10.1063/1.5142168)
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Abstract
The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Europium spectator ions reveal switching between two spectrally unique metastable centres, each corresponding to a particular acceptor state. By ion co-implantation of europium and oxygen into GaN(Mg), we produce, in addition, an anchored state system. In doing so we create an abundance of previously unidentified stable centres which we denote as "Eu0(Ox)". We introduce a microscopic model for these centres with oxygen substituting for nitrogen in the bridging site.
ORCID iDs
Cameron, D., O'Donnell, K.P. ORCID: https://orcid.org/0000-0003-3072-3675, Edwards, P.R. ORCID: https://orcid.org/0000-0001-7671-7698, Peres, M., Lorenz, K., Kappers, M.J. and Boćkowski, M.;-
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Item type: Article ID code: 71643 Dates: DateEvent9 March 2020Published21 February 2020Accepted28 January 2020SubmittedSubjects: Science > Physics Department: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 03 Mar 2020 12:18 Last modified: 15 Oct 2024 00:42 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/71643