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Armstrong, R. and Coulon, P-M. and Bozinakis, P. and Martin, R.W. and Shields, P.A. (2020) Creation of regular arrays of faceted AlN nanostructures via a combined topdown, bottom-up approach. Journal of Crystal Growth, 548. 125824. ISSN 0022-0248

Walde, S. and Hagedorn, S. and Coulon, P.-M. and Mogilatenko, A. and Netzel, C. and Weinrich, J. and Susilo, N. and Ziffer, E. and Matiwe, L. and Hartmann, C. and Kusch, G. and Alasmari, A. and Naresh-Kumar, G. and Trager-Cowan, C. and Wernicke, T. and Straubinger, T. and Bickermann, M. and Martin, R. W. and Shields, P. A. and Kneissl, M. and Weyers, M. (2020) AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 531. 125343. ISSN 0022-0248

Roberts, J.W. and Chalker, P.R. and Ding, B. and Oliver, R.A. and Gibbon, J.T. and Jones, L.A.H. and Dhanak, V.R. and Phillips, L.J. and Major, J.D. and Massabuau, F.C.-P. (2019) Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. Journal of Crystal Growth, 528. 125254. ISSN 0022-0248

Lee, Lok Yi and Frentrup, Martin and Vacek, Petr and Massabuau, Fabien C.-P. and Kappers, Menno J. and Wallis, David J. and Oliver, Rachel A. (2019) Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substrates. Journal of Crystal Growth, 524. 125167. ISSN 0022-0248

Roberts, J.W. and Jarman, J.C. and Johnstone, D.N. and Midgley, P.A. and Chalker, P.R. and Oliver, R.A. and Massabuau, F.C-P. (2018) α-Ga2O3 grown by low temperature atomic layer deposition on sapphire. Journal of Crystal Growth, 487. pp. 23-27. ISSN 0022-0248

Le Boulbar, E. D. and Priesol, J. and Nouf-Allehiani, M. and Naresh-Kumar, G. and Fox, S. and Trager-Cowan, C. and Šatka, A. and Allsopp, D. W. E. and Shields, P. A. (2017) Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes. Journal of Crystal Growth. pp. 30-38. ISSN 0022-0248

Ben Sassi, Mokhtar and Kaddeche, Slim and Lappa, Marcello and Millet, Séverine and Henry, Daniel and Ben Hadid, Hamda (2017) On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman method. Journal of Crystal Growth, 458. pp. 154-165. ISSN 0022-0248

Summerton, Emily and Zimbitas, Georgina and Britton, Melanie and Bakalis, Serafim (2016) Crystallisation of sodium dodecyl sulfate and the corresponding effect of 1-dodecanol addition. Journal of Crystal Growth, 455. pp. 111-116. ISSN 0022-0248

Kaufmann, Nils A.K. and Lahourcade, L. and Hourahine, B. and Martin, D. and Grandjean, N. (2016) Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth. Journal of Crystal Growth, 433. pp. 36-42. ISSN 0022-0248

Novikov, Sergei V. and Staddon, C.R. and Martin, Robert and Kent, A.J. and Foxon, C. Thomas (2015) Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers. Journal of Crystal Growth, 425. p. 125. ISSN 0022-0248

Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248

Novikov, S. V. and Ting, M. and Yu, K.M. and Sarney, W.L. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2014) Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 404. pp. 9-13. ISSN 0022-0248

Massabuau, F. C.-P. and Tartan, C. C. and Traynier, R and Blenkhorn, W. E. and Kappers, M. J. and Dawson, P and Humphreys, C. J. and Oliver, R. A. (2014) The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth, 386 (88). pp. 88-93. ISSN 0022-0248

Vennegues, P. and Diaby, B. S. and Kim-Chauveau, H. and Bodiou, L. and Schenk, H. P. D. and Frayssinet, E. and Martin, R. W. and Watson, I. M. (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters. Journal of Crystal Growth, 353 (1). pp. 108-114. ISSN 0022-0248

Novikov, S. V. and Staddon, C. R. and Luckert, F. and Edwards, P. R. and Martin, R. W. and Kent, A. J. and Foxon, C. T. (2012) Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 350 (1). pp. 80-84. ISSN 0022-0248

Novikov, S.V. and Staddon, C.R. and Foxon, C.T. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Kent, A.J. (2011) Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals. Journal of Crystal Growth, 323 (1). pp. 80-83. ISSN 0022-0248

Novikov, S.V. and Staddon, C.R. and Foxon, C.T. and Yu, K.M. and Broesler, R. and Hawkridge, M. and Liliental-Weber, Z. and Denlinger, J. and Demchenko, I. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Walukiewicz, W. (2011) Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. Journal of Crystal Growth, 323 (1). pp. 60-63. ISSN 0022-0248

Novikov, S.V. and Staddon, C.R. and Powell, R.E.L. and Akimov, A.V. and Luckert, F. and Edwards, P.R. and Martin, R.W. and Kent, A.J. and Foxon, C.T. (2011) Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 322 (1). pp. 23-26. ISSN 0022-0248

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Roqan, I.S. and Nogales, E. and O'Donnell, K.P. and Trager-Cowan, C. and Martin, R.W. and Halambalakis, G. and Briot, O. (2008) The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. Journal of Crystal Growth, 310 (18). pp. 4069-4072. ISSN 0022-0248

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Kim, K.S. and Kim, T. and Park, Y.J. and Baek, S.I. and Kim, Y.W. and Sun, H.D. and Dawson, M.D. (2006) Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. Journal of Crystal Growth, 287 (2). pp. 620-624. ISSN 0022-0248

O'Donnell, K P and Fernandez-Torrente, I and Edwards, P R and Martin, R W (2004) The composition dependence of the InxGa1-xN bandgap. Journal of Crystal Growth, 269 (1). pp. 100-105. ISSN 0022-0248

Calvez, S. and Hopkins, J.M. and Smith, S.A. and Clark, A.H. and Macaluso, R. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. and Gundogdu, K. and Hall, K.C. and Boggess, T.F. (2004) GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth, 268 (3-4). pp. 457-465. ISSN 0022-0248

Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2004) Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique. Journal of Crystal Growth, 268 (3-4). pp. 527-530. ISSN 0022-0248

Long, Xifa and Wang, Guofu and Han, T.P.J. (2003) Growth and spectroscopic properties of Cr3+-doped LaSc3(BO3)(4). Journal of Crystal Growth, 249 (1-2). pp. 191-194. ISSN 0022-0248

Wang, Guofu and Lin, Zhoubin and Hu, Zushu and Han, T.P.J. and Gallagher, H.G. and Wells, J.-P.R. (2001) Crystal growth and optical assessment of Nd3+ : GdAl3(BO3)4 crystal. Journal of Crystal Growth, 233 (4). pp. 755-760. ISSN 0022-0248

Berlouis, L.E.A. and Wark, A.W. and Cruickshank, F.R. and Antoine, R. and Galletto, P. and Brevet, Pierre-Francois and Girault, H.H. and Gupta, S.C. and Chavada, F.R. and Garg, A.K. (1998) Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces. Journal of Crystal Growth, 184-185. pp. 691-695. ISSN 0022-0248

Roberts, K.J. and Sherwood, J.N. and Stewart, A. (1990) The nucleation of normal-eicosane crystals from solution in normal-dodecane in the presence of homologous impurities. Journal of Crystal Growth, 102 (3). pp. 419-426. ISSN 0022-0248