Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

Kim, K.S. and Kim, T. and Park, Y.J. and Baek, S.I. and Kim, Y.W. and Sun, H.D. and Dawson, M.D. (2006) Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. Journal of Crystal Growth, 287 (2). pp. 620-624. ISSN 0022-0248 (http://dx.doi.org/10.1016/j.jcrysgro.2005.10.143)

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Abstract

Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

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