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Transforming automated inspection & non-destructive testing: world-leading Open Access research on robotics, sensors & ultrasonics

Strathprints makes available scholarly Open Access content by researchers within the Centre for Ultrasonic Engineering, based within Electronic & Electrical Engineering.

Research at CUE brings together next generation robotics with sensing technology to enable inspection of high value components, such as aerospace components, at the point of manufacture. Non-destructive testing techniques using ultrasound and other sensors can then be deployed to assess components for structural faults or damage and thereby ensure they are built correctly and more efficiently. Research at CUE is to be stimulated by the construction of a new £2.5 million state-of-the-art Robotically-Enabled Sensing (RES) hub within the Department of Electronic & Electrical Engineering (EEE).

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Number of items: 6.

Trager-Cowan, Carol and Alasmari, Aeshah and Avis, William and Bruckbauer, Jochen and Edwards, Paul R and Ferenczi, Gergely and Hourahine, Benjamin and Kotzai, Almpes and Kraeusel, Simon and Kusch, Gunnar and Martin, Robert W and McDermott, Ryan and Gunasekar, Naresh and Nouf-Allehiani, M. and Pascal, Elena and Thomson, David and Vespucci, Stefano and Smith, Matthew David and Parbrook, Peter J and Enslin, Johannes and Mehnke, Frank and Kuhn, Christian and Wernicke, Tim and Kneissl, Michael and Hagedorn, Sylvia and Knauer, Arne and Walde, Sebastian and Weyers, Markus and Coulon, Pierre-Marie and Shields, Philip and Bai, J. and Gong, Y. and Jiu, Ling and Zhang, Y. and Smith, Richard and Wang, Tao and Winkelmann, Aimo (2020) Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology. ISSN 0268-1242

Trager-Cowan, C. and Alasmari, A. and Avis, W. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Kraeusel, S. and Kusch, G. and Johnston, R. and Naresh-Kumar, G. and Martin, R. W. and Nouf-Allehiani, M. and Pascal, E. and Spasevski, L. and Thomson, D. and Vespucci, S. and Parbrook, P. J. and Smith, M. D. and Enslin, J. and Mehnke, F. and Kneissl, M. and Kuhn, C. and Wernicke, T. and Hagedorn, S. and Knauer, A. and Kueller, V. and Walde, S. and Weyers, M. and Coulon, P.-M. and Shields, P. A. and Zhang, Y. and Jiu, L. and Gong, Yipin and Smith, R. M. and Wang, T. and Winkelmann, A. (2019) Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82. ISSN 2327-9125

Naresh-Kumar, G. and Thomson, David and Zhang, Y. and Bai, J. and Jiu, L. and Yu, X. and Gong, Y. P. and Martin, Richard Smith and Wang, Tao and Trager-Cowan, Carol (2018) Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124 (6). 065301. ISSN 0021-8979

Smith, M. D. and Thomson, D. and Zubialevich, V. Z. and Li, H. and Naresh-Kumar, G. and Trager-Cowan, C. and Parbrook, P. J. (2017) Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation. Physica Status Solidi A, 214 (1). 1600353. ISSN 1862-6300

Naresh-Kumar, G. and Thomson, D. and Nouf-Allehiani, M. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Martin, R.W. and Trager-Cowan, C. (2016) Electron channelling contrast imaging for III-nitride thin film structures. Materials Science in Semiconductor Processing, 47. pp. 44-50. ISSN 1369-8001

Trager-Cowan, C. and Naresh-Kumar, G. and Allehiani, N. and Kraeusel, S. and Hourahine, B. and Vespucci, S. and Thomson, D. and Bruckbauer, J. and Kusch, G. and Edwards, P. R. and Martin, R. W. and Mauder, C. and Day, A. P. and Winkelmann, A. and Vilalta-Clemente, A. and Wilkinson, A. J. and Parbrook, P. J. and Kappers, M. J. and Moram, M. A. and Oliver, R. A. and Humphreys, C. J. and Shields, P. and Le Boulbar, E. D. and Maneuski, D. and O'Shea, V. and Mingard, K. P. (2014) Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20 (S3). pp. 1024-1025. ISSN 1435-8115

This list was generated on Wed Apr 1 15:50:53 2020 BST.