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Spasevski, Lucia and Kusch, Gunnar and Pampili, Pietro and Zubialevich, Vitaly Z and Dinh, Duc V and Bruckbauer, Jochen and Edwards, Paul R and Parbrook, Peter J and Martin, Robert W (2021) A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content. Journal of Physics D: Applied Physics, 54 (3). 035302. ISSN 1361-6463
Kusch, Gunnar and Conroy, Michele and Li, Haoning and Edwards, Paul R. and Zhao, Chao and Ooi, Boon S. and Pugh, Jon and Cryan, Martin J. and Parbrook, Peter J. and Martin, Robert W. (2018) Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging. Scientific Reports, 8 (1). 1742. ISSN 2045-2322
Conroy, M. and Li, H. and Kusch, G. and Zhao, C. and Ooi, B. and Edwards, P. R. and Martin, R. W. and Holmes, J. D. and Parbrook, P. J. (2016) Correction: Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale, 8 (27). p. 13521. ISSN 2040-3372
Conroy, M. and Li, H. and Kusch, G. and Zhao, C. and Ooi, B. and Edwards, P. R. and Martin, R. W. and Holmes, J. D. and Parbrook, P. J. (2016) Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. Nanoscale, 8 (21). pp. 11019-11026. ISSN 2040-3372
Taylor, E. and Smith, M.D. and Sadler, T.C. and Lorenz, K. and Li, H.N. and Alves, E. and Parbrook, P.J. and Martin, R.W. (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. Journal of Crystal Growth, 408. pp. 97-101. ISSN 0022-0248
Trager-Cowan, C. and Naresh-Kumar, G. and Allehiani, N. and Kraeusel, S. and Hourahine, B. and Vespucci, S. and Thomson, D. and Bruckbauer, J. and Kusch, G. and Edwards, P. R. and Martin, R. W. and Mauder, C. and Day, A. P. and Winkelmann, A. and Vilalta-Clemente, A. and Wilkinson, A. J. and Parbrook, P. J. and Kappers, M. J. and Moram, M. A. and Oliver, R. A. and Humphreys, C. J. and Shields, P. and Le Boulbar, E. D. and Maneuski, D. and O'Shea, V. and Mingard, K. P. (2014) Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20 (S3). pp. 1024-1025. ISSN 1435-8115