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Article

Yakovlev, E.V. and Talalaev, R.A. and Martin, R.W. and Peng, N. and Jeynes, C. and Deatcher, C.J. and Watson, I.M. (2006) Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor. Physica Status Solidi C, 3 (6). pp. 1620-1623. ISSN 1610-1642

Deatcher, C.J. and Bejtka, K. and Martin, R.W. and Romani, S. and Kheyrandish, H. and Smith, L.M. and Rushworth, S.A. and Liu, C. and Cheong, M.G. and Watson, I.M. (2005) Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology, 21 (9). pp. 1287-1295.

Deatcher, C.J. and Liu, C. and Cheong, M.G. and Smith, L.M. and Rushworth, S. and Widdowson, A. and Watson, I.M. (2004) Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10 (4). pp. 187-190. ISSN 0948-1907

Martin, R W and Edwards, P R and Liu, C and Deatcher, C J and Chong, H M H and De La Rue, R M and Watson, I M (2004) Cathodoluminescence spectral mapping of selectively grown III-nitride structures. Institute of Physics Conference Series, 179. pp. 135-138. ISSN 0951-3248

Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Shvartsman, V.V. and Kholkin, A.L. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. and Mayer, M. (2004) Roughness in gaN/InGaN films and multilayers determined with Rutherford backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (3). pp. 479-497. ISSN 0168-583X

Deatcher, C.J. and Liu, C. and Pereira, S.M.D.S. and Lada, M. and Cullis, A.G. and Sung, Y.J. and Brandt, O. and Watson, I.M. (2003) In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures. Semiconductor Science and Technology, 18 (4). pp. 212-218. ISSN 0268-1242

Liu, C. and Deatcher, C.J. and Cheong, M.G. and Watson, I.M. (2003) Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy. Institute of Physics Conference Series, 180. pp. 657-660. ISSN 0951-3248

Liu, C. and Deatcher, C.J. and Cheong, M.G. and Watson, I.M. (2003) Atomic force microscopy of inGaN-based structures grown by metal-organic chemical vapour deposition. Institute of Physics Conference Series, 180. pp. 657-660. ISSN 0951-3248

White, M.E. and O'Donnell, K.P. and Martin, R.W. and Pereira, S. and Deatcher, C.J. and Watson, I.M. (2002) Photoluminescence excitation spectroscopy of ingan epilayers. Materials Science and Engineering B, 93 (1-3). pp. 147-149. ISSN 0921-5107

Pereira, S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. and Deatcher, C.J. (2002) Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping. Applied Physics Letters, 80 (21). pp. 3913-3915. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Liu, C. and Deatcher, C.J. and Watson, I.M. and O'Donnell, K.P. (2002) Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. Journal of Physics D: Applied Physics, 35 (7). pp. 604-608. ISSN 1361-6463

Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Alves, E. and Barradas, N.P. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. (2002) Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. Applied Physics Letters, 81 (16). pp. 2950-2952. ISSN 0003-6951

Watson, I.M. and Liu, C. and Kim, K.S. and Kim, H.S. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth. Physica Status Solidi A, 188 (2). pp. 743-746. ISSN 1862-6300

Conference or Workshop Item

Watson, I.M. and Kim, K.S. and Kim, H.S. and Liu, C. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In-situ reflectometry based studies of lateral epitaxial overgrowth. In: UK Nitrides Consortium Meeting, 2001-09-01. (Unpublished)

Watson, I.M. and Dawson, M.D. and Deatcher, C.J. and Kim, H.S. and Kim, K.S. and Liu, C. (2001) In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. In: European workshop on metalorganic vapour phase epitaxy, 2001-06-10 - 2001-06-13. (Unpublished)