Silicon doping of gallium nitride using ditertiarybutylsilane
Deatcher, C.J. and Liu, C. and Cheong, M.G. and Smith, L.M. and Rushworth, S. and Widdowson, A. and Watson, I.M. (2004) Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10 (4). pp. 187-190. ISSN 0948-1907 (http://dx.doi.org/10.1002/cvde.200304171)
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ORCID iDs
Deatcher, C.J., Liu, C., Cheong, M.G., Smith, L.M., Rushworth, S., Widdowson, A. and Watson, I.M. ORCID: https://orcid.org/0000-0002-8797-3993;-
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Item type: Article ID code: 5254 Dates: DateEvent8 September 2004PublishedSubjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of PhotonicsDepositing user: Strathprints Administrator Date deposited: 30 Jan 2008 Last modified: 02 Sep 2024 00:38 URI: https://strathprints.strath.ac.uk/id/eprint/5254
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