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Spasevski, Lucia and Buse, Ben and Edwards, Paul R. and Hunter, Daniel A. and Enslin, Johannes and Foronda, Humberto M. and Wernicke, Tim and Mehnke, Frank and Parbrook, Peter J. and Kneissl, Michael and Martin, Robert W. (2021) Quantification of trace-level silicon doping in AlxGa1–xN films using wavelength-dispersive X-ray microanalysis. Microscopy and Microanalysis, 27 (4). pp. 696-704. ISSN 1431-9276
Spasevski, Lucia and Kusch, Gunnar and Pampili, Pietro and Zubialevich, Vitaly Z and Dinh, Duc V and Bruckbauer, Jochen and Edwards, Paul R and Parbrook, Peter J and Martin, Robert W (2021) A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content. Journal of Physics D: Applied Physics, 54 (3). 035302. ISSN 1361-6463
Trager-Cowan, C. and Alasmari, A. and Avis, W. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Kraeusel, S. and Kusch, G. and Johnston, R. and Naresh-Kumar, G. and Martin, R. W. and Nouf-Allehiani, M. and Pascal, E. and Spasevski, L. and Thomson, D. and Vespucci, S. and Parbrook, P. J. and Smith, M. D. and Enslin, J. and Mehnke, F. and Kneissl, M. and Kuhn, C. and Wernicke, T. and Hagedorn, S. and Knauer, A. and Kueller, V. and Walde, S. and Weyers, M. and Coulon, P.-M. and Shields, P. A. and Zhang, Y. and Jiu, L. and Gong, Yipin and Smith, R. M. and Wang, T. and Winkelmann, A. (2019) Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82. ISSN 2327-9125
Kusch, Gunnar and Enslin, Johannes and Spasevski, Lucia and Teke, Tolga and Wernicke, Tim and Edwards, Paul R. and Kneissl, Michael and Martin, Robert W. (2019) Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN. Japanese Journal of Applied Physics, 58 (SC). SCCB18. ISSN 0021-4922
Enslin, Johannes and Wernicke, Tim and Lobanova, Anna and Kusch, Gunnar and Spasevski, Lucia and Teke, Tolga and Belde, Bettina and Martin, Robert W. and Talalaev, Roman and Kneissl, Michael (2019) Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDs. Japanese Journal of Applied Physics, 58 (SC). SC1004. ISSN 0021-4922
Ajia, I. A. and Yamashita, Y. and Lorenz, K. and Muhammed, M. M. and Spasevski, L. and Almalawi, D. and Xu, J. and Iizuka, K. and Morishima, Y. and Anjum, D. H. and Wei, N. and Martin, R. W. and Kuramata, A. and Roqan, I. S. (2018) GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. Applied Physics Letters, 113 (8). 082102. ISSN 0003-6951
Edwards, Paul R. and Naresh-Kumar, G. and Kusch, Gunnar and Bruckbauer, Jochen and Spasevski, Lucia and Brasser, Catherine G. and Wallace, Michael J. and Trager-Cowan, Carol and Martin, Robert W. (2018) You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization. Microscopy and Microanalysis, 24 (S1). pp. 2026-2027. ISSN 1431-9276