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Zuiani, Federico and Gibbings, Alison and Vetrisano, Massimo and Rizzi, Francesco and Martinez, Cesar and Vasile, Massimiliano (2012) Orbit determination and control for the European Student Moon Orbiter. Acta Astronautica, 79. pp. 67-78. ISSN 0094-5765

Gibbings, Alison and Vasile, Massimiliano and Zuiani, Federico and Novak, Daniel and Rizzi, Francesco and Martinez, Cesar (2010) European Student Moon Orbiter (ESMO) - Mission Overview : Presentation. In: ESA/ESTEC Systems Requirement Review Workshop, 2010-03-22 - 2010-03-26.

Watson, I.M. and Xiong, C. and Gu, E. and Dawson, M.D. and Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2008) Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures. Proceedings of SPIE the International Society for Optical Engineering, 6993. ISSN 0277-786X

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414.

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Kang, X.N. and Zhang, G.Y. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters, 90 (11). 111112. ISSN 0003-6951

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Rizzi, F. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Dry etching of n-face GaN using two high-density plasma etch techniques. Physica Status Solidi C, 4 (1). pp. 200-2003. ISSN 1610-1642

Rizzi, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2007) Thinning of N-face GaN (000-1) samples by inductively coupled plasma etching and chemomechanical polishing. Journal of Vacuum Science and Technology A, 25 (2). pp. 252-260. ISSN 0734-2101

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Edwards, P.R. and Martin, R.W. (2006) Processing of n-face GaN for microcavity applications. In: The E-MRS 2006 Spring Meeting, 2006-05-29 - 2006-06-02. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2006) Processing of n-face GaN for surface-emitting laser fabrication. In: 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 2006-05-15 - 2006-05-19. (Unpublished)

Rizzi, F. and Edwards, P.R. and Watson, I.M. and Martin, R.W. (2006) Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface. Superlattices and Microstructures, 40 (4-6). pp. 369-372.

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.