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Being more open: International Open Access Week at Strathprints (19-25 Oct 2020)...

Strathprints makes available scholarly Open Access content by researchers from the University of Strathclyde, spanning numerous disciplines across science, engineering, business, social sciences and humanties. 19-25 October 2020 is International Open Access Week, an annual global event to promote the need for, and benefits of, greater Open Access in scholarship. This not only encompasses greater openness of research publications like journal articles and conference papers, but also important outputs of the research process, such as data (e.g. Open Data).

At Strathclyde we are committed to progressing towards full Open Access by 2025. That is why close to 90% of all research is now made available Open Access, principally through Strathprints. Explore all of Strathclyde's Open Access research...

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Number of items: 17.

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Fernandez-Garrido, S. and Calleja, E. (2008) Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 104 (7). 073537. ISSN 0021-8979

Bejtka, K. and Reveret, F. and Martin, R.W. and Edwards, Paul and Vasson, A. and Leymarie, J. and Sellers, I.R. and Duboz, J.Y. (2008) Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92 (24). 241105. ISSN 0003-6951

Watson, I.M. and Xiong, C. and Gu, E. and Dawson, M.D. and Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2008) Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures. Proceedings of SPIE the International Society for Optical Engineering, 6993. ISSN 0277-786X

Bejtka, K. and Edwards, P.R. and Martin, R.W. and Reveret, F. and Vasson, A. and Leymarie, J. and Sellers, I.R. and Leroux, M. (2008) Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities. Semiconductor Science and Technology, 23 (4). ISSN 0268-1242

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414.

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Kang, X.N. and Zhang, G.Y. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters, 90 (11). 111112. ISSN 0003-6951

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Rizzi, F. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Dry etching of n-face GaN using two high-density plasma etch techniques. Physica Status Solidi C, 4 (1). pp. 200-2003. ISSN 1610-1642

Coquillat, D. and Le Vassor D'Yerville, M. and Boubang, T.S.A. and Liu, C. and Bejtka, K. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2007) Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids. Physica Status Solidi C, 4. pp. 95-99. ISSN 1610-1642

Bejtka, K. and Martin, R.W. and Watson, I.M. and Ndiaye, S. and Leroux, M. (2006) Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. Applied Physics Letters, 89 (191912). pp. 191912-1. ISSN 0003-6951

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Edwards, P.R. and Martin, R.W. (2006) Processing of n-face GaN for microcavity applications. In: The E-MRS 2006 Spring Meeting, 2006-05-29 - 2006-06-02. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2006) Processing of n-face GaN for surface-emitting laser fabrication. In: 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 2006-05-15 - 2006-05-19. (Unpublished)

Park, S. and Liu, C. and Gu, E. and Dawson, M.D. and Watson, I.M. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2006) Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates. Physica Status Solidi C, 3 (6). pp. 1949-1952. ISSN 1610-1642

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

Deatcher, C.J. and Bejtka, K. and Martin, R.W. and Romani, S. and Kheyrandish, H. and Smith, L.M. and Rushworth, S.A. and Liu, C. and Cheong, M.G. and Watson, I.M. (2005) Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology, 21 (9). pp. 1287-1295.

This list was generated on Sun Oct 25 09:00:22 2020 GMT.