Reprint of : Electron channelling contrast imaging for III-nitride thin film structures

Naresh-Kumar, G. and Thomson, D. and Nouf-Allehiani, M. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Martin, R. W. and Trager-Cowan, C. (2016) Reprint of : Electron channelling contrast imaging for III-nitride thin film structures. Materials Science in Semiconductor Processing, 55. pp. 19-25. ISSN 1369-8001 (https://doi.org/10.1016/j.mssp.2016.09.025)

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Abstract

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

  • Item type:Article
    ID code:72242
    Dates:
    Date
    Event
    15 November 2016
    Published
    4 October 2016
    Published Online
    11 February 2016
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:04 May 2020 15:27
    Last modified:14 Apr 2024 00:52
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/72242
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