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Lorenz, K. and Barradas, N.P. and Alves, E. and Roqan, I.S. and Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Gloux, F. and Ruterana, P. (2009) Structural and optical characterization of Eu-implanted GaN. Journal of Physics D: Applied Physics, 42 (16). 165103. ISSN 1361-6463
Roqan, I.S. and Nogales, E. and O'Donnell, K.P. and Trager-Cowan, C. and Martin, R.W. and Halambalakis, G. and Briot, O. (2008) The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. Journal of Crystal Growth, 310 (18). pp. 4069-4072. ISSN 0022-0248
Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). 073510. ISSN 0021-8979
Katchkanov, V and Mosselmans, J F W and O'Donnell, K P and Nogales, E and Hernandez, S and Martin, R W and Steckl, A and Lee, D S (2006) Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28 (6-7). pp. 785-789.
Lorenz, K. and Wahl, U. and Alves, E. and Nogales, E and Dalmasso, S and Martin, R W and O'Donnell, K P and Wojdak, M and Braud, A and Monteiro, T and Wojtowicz, T and Ruterana, P and Ruffenach, S and Briot, O (2006) High temperature annealing of rare earth implanted GaN films : structural and optical properties. Optical Materials, 28 (6-7). pp. 750-758.
Hernandez, S and Cusco, R and Artus, L and Nogales, E and Martin, R W and O'Donnell, K P and Halambalakis, G and Briot, O and Lorenz, K and Alves, E (2006) Lattice order in thulium-doped GaN epilayers : in situ doping versus ion implantation. Optical Materials, 28 (6-7). pp. 771-774.
Wang, K and Martin, RW and Nogales, E and Katchkanov, V and O'Donnell, KP and Hernandez, S and Lorenz, K and Alves, E and Ruffenach, S and Briot, O (2006) Optical properties of high-temperature annealed Eu-implanted GaN. Optical Materials, 28 (6-7). pp. 797-801.
Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2006) Failure mechanism of AlN nanocaps used to protect RE-implanted GaN during high temperature annealing. Applied Physics Letters, 88. p. 31902. ISSN 0003-6951
Wang, K. and Martin, R.W. and Nogales, E. and Edwards, P.R. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Watson, I.M. (2006) Cathodoluminescence of rare earth implanted AlInN. Applied Physics Letters, 89 (13). 131912. ISSN 0003-6951
Wang, K. and Martin, R.W. and O'Donnell, K.P. and Katchkanov, V. and Nogales, E. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu- implanted GaN. Applied Physics Letters, 87 (11). 112107. ISSN 0003-6951
Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Cusco, R. and Pastor, D. and Artus, L. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2005) Structural and optical properties of MOCVD AllnN epilayers. MRS Online Proceedings Library, 388-393 (6). pp. 388-393. ISSN 0272-9172
O'Donnell, K.P. and Katchkanov, V. and Wang, K. and Martin, R.W. and Hourahine, B. and Edwards, P.R. and Nogales, E. and Mosselmans, J.F.W. and De-Vries, B. (2004) Site multiplicity of rare earth ions in III-nitrides. MRS Online Proceedings Library, 831. pp. 527-535. ISSN 0272-9172
Book Section
Roqan, Iman and Trager-Cowan, Carol and Hourahine, Ben and Lorenz, Katharina and Nogales, Emilio and O'Donnell, Kevin P. and Martin, Robert W. and Alves, Eduardo and Ruffenach, S. and Briot, Olivier; Kuball, M. and Mukai, T. and Myers, T.H. and Redwing, J.M., eds. (2006) Characterization of the blue emission of Tm/Er co-implanted GaN. In: GaN, AIN, InN and Related Materials. Materials Research Society Symposium Proceedings . Materials Research Society, USA, pp. 599-604. ISBN 9781558998469
Nogales, Emilio and Lorenz, K. and Wang, K and Roqan, I. S. and Martin, R.W. and O'Donnell, K.P. and Alves, E. and Ruffenach, S. and Briot, O.; Kuball, M. and Mukai, T. and Myers, T.H. and Redwing, J.M., eds. (2006) A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. In: GaN, AIN, InN and Related Materials. Materials research society symposium proceedings . Materials Research Society, USA, pp. 625-630. ISBN 9781558998469
Conference or Workshop Item
Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Pastor, D. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. and Network, RENiBE1; Kuball, M and Myers, TH and Redwing, JM and Mukai, T, eds. (2006) Structural and optical properties of MOCVD InAlN epilayers. In: Symposium on GaN, AIN, InN Related Materials, 2005-11-28 - 2005-12-02.