Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

Trager-Cowan, C. and Alasmari, A. and Avis, W. and Bruckbauer, J. and Edwards, P. R. and Hourahine, B. and Kraeusel, S. and Kusch, G. and Jablon, B. M. and Johnston, R. and Martin, R. W. and McDermott, R. and Naresh-Kumar, G. and Nouf-Allehiani, M. and Pascal, E. and Thomson, D. and Vespucci, S. and Mingard, K. and Parbrook, P. J. and Smith, M. D. and Enslin, J. and Mehnke, F. and Kneissl, M. and Kuhn, C. and Wernicke, T. and Knauer, A. and Hagedorn, S. and Walde, S. and Weyers, M. and Coulon, P-M and Shields, P. A. and Zhang, Y. and Jiu, L. and Gong, Y. and Smith, R. M. and Wang, T. and Winkelmann, A. (2020) Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope. IOP Conference Series: Materials Science and Engineering, 891 (1). 012023. ISSN 1757-899X (https://doi.org/10.1088/1757-899X/891/1/012023)

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Abstract

In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on crystal structure, crystal misorientation, grain boundaries, strain and structural defects on length scales from tens of nanometres to tens of micrometres. Here we report on the imaging and analysis of dislocations and sub-grains in nitride semiconductor thin films (GaN and AlN) and tungsten carbide-cobalt (WC-Co) hard metals. Our aim is to illustrate the capability of these techniques for investigating structural defects in the SEM and the benefits of combining these diffraction-based imaging techniques.

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