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Almalawi, Dhaifallah and Lopatin, Sergei and Edwards, Paul R. and Xin, Bin and Subedi, Ram C. and Najmi, Mohammed A. and Alreshidi, Fatimah and Genovese, Alessandro and Iida, Daisuke and Wehbe, Nimer and Ooi, Boon S. and Ohkawa, Kazuhiro and Martin, Robert W. and Roqan, Iman S. (2023) Simultaneous growth strategy of high-optical efficiency GaN NWs on a wide-range of substrates by pulsed laser deposition. ACS Omega, 8 (49). pp. 46804-46815. ISSN 2470-1343

Ajia, Idris. A. and Edwards, Paul R. and Pak, Yusin and Belekov, Ermek and Roldan, Manuel A. and Wei, Nini and Liu, Zhiqiang and Martin, Robert W. and Roqan, Iman S. (2018) Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode. ACS Photonics, 5 (3). pp. 820-826. ISSN 2330-4022

Ajia, Idris A. and Edwards, P. R. and Liu, Z. and Yan, J. C. and Martin, R. W. and Roqan, I. S. (2014) Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries. Applied Physics Letters, 105 (12). 122111. ISSN 0003-6951

Miranda, S. M. C. and Edwards, P. R. and O'Donnell, K. P. and Boćkowski, M. and Alves, E. and Roqan, I. S. and Vantomme, A. and Lorenz, K. (2014) Sequential multiple-step europium ion implantation and annealing of GaN. Physica Status Solidi C, 11 (2). pp. 253-257. ISSN 1610-1642

O'Donnell, K. P. and Roqan, I. S. and Wang, Ke and Lorenz, K. and Alves, E. and Bockowski, M. (2011) The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN. Optical Materials, 33 (7). pp. 1063-1065.

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Edwards, P.R. and Song, S.F. and Vantomme, A. and Lorenz, K. and Alves, E. and Boćkowski, M. (2010) Identification of the prime optical center in GaN:Eu3+. Physical Review B, 81 (1). 085209. ISSN 1098-0121

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 083508. ISSN 0021-8979

Lorenz, K. and Barradas, N.P. and Alves, E. and Roqan, I.S. and Nogales, E. and Martin, R.W. and O'Donnell, K.P. and Gloux, F. and Ruterana, P. (2009) Structural and optical characterization of Eu-implanted GaN. Journal of Physics D: Applied Physics, 42 (16). 165103. ISSN 1361-6463

Lorenz, K. and Roqan, I.S. and Franco, N. and O'Donnell, K.P. and Darakchieva, V. and Alves, E. and Trager-Cowan, C. and Martin, R.W. and As, D.J. and Panfilova, M., Fundacao para a Ciencia e Tecnologia (FCT), Portugal (Funder), HOYA Corporation (Funder), German Science Foundation (DFG) (Funder) (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). 113507. ISSN 0021-8979

Roqan, I.S. and Nogales, E. and O'Donnell, K.P. and Trager-Cowan, C. and Martin, R.W. and Halambalakis, G. and Briot, O. (2008) The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. Journal of Crystal Growth, 310 (18). pp. 4069-4072. ISSN 0022-0248

Lorenz, K. and Alves, E. and Roqan, I.S. and Martin, R.W. and Trager-Cowan, C. and O'Donnell, K.P. and Watson, I.M. (2008) Rare earth doping of III-nitride alloys by ion implantation. Physica Status Solidi A, 205 (1). pp. 34-37. ISSN 1862-6300

Roqan, I.S. and O'Donnell, K.P. and Trager-Cowan, C. and Hourahine, B. and Martin, R.W. and Lorenz, K. and Alves, E. and As, D.J. and Panfilova, M. and Watson, I.M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. Physica Status Solidi B, 245 (1). pp. 170-173. ISSN 0370-1972

Roqan, I. S. and Lorenz, K. and O'Donnell, K. P. and Trager-Cowan, C. and Martin, R. W. and Watson, I. M. and Alves, E. (2006) Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN. Superlattices and Microstructures, 40 (4-6). pp. 445-451. ISSN 0749-6036

Book Section

Lorenz, Katharina K. and Miranda, S. M C S.M.C. and Alves, E. Jorge E.J. and Roqan, Iman S. I.S. and O'Donnell, Kevin Peter K.P. and Boćkowski, Michał X. M.X.; (2012) High pressure annealing of Europium implanted GaN. In: Proceedings of SPIE - The International Society for Optical Engineering. SPIE, pp. 82-87.