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Powering innovation in artificial intelligence with Open Access research...

Artificial intelligence (AI) and machine learning (ML) together represent a research frontier with a wide variety of discipline specific applications. At Strathclyde researchers in Computer & Information Sciences are exploring improved AI planning models to enable improved decision making by automous agents. Meanwhile, research conducted by the Aerospace Centre of Excellence is using AI and computational techniques to optimize the efficacy of certain astronautic applications. This includes 'global trajectory optimization' to aircraft and spacecraft design, from the planning and scheduling for autonomous vehicles to the synthesis of robust controllers for airplanes or satellites.

AI is also transforming the research agenda within Finance, where researchers are exploring the potential of AI and machine learning in evaluating banking risks and in new, emerging aspects of FinTech.

Explore some of this Open Access research from Computer & Information Sciences, Aerospace Centre of Excellence and Finance. Or explore all of Strathclyde's Open Access research...

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Number of items: 13.

Article

Chinnam, Krishna Chytanya and Gupta, Swati and Gleskova, Helena (2012) Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors. Journal of Non-Crystalline Solids, 358 (17). pp. 2512-2515. ISSN 0022-3093

Tokmakov, K. V. and Cumming, A. and Hough, J. and Jones, R. and Kumar, R. and Reid, S. and Rowan, S. and Lockerbie, N. A. and Wanner, A. and Hammond, G. (2012) A study of the fracture mechanisms in pristine silica fibres utilising high speed imaging techniques. Journal of Non-Crystalline Solids, 358 (14). pp. 1699-1709. ISSN 0022-3093

Gleskova, Helena and Wagner, Sigurd (2008) Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils. Journal of Non-Crystalline Solids, 354 (19-25). pp. 2627-2631. ISSN 0022-3093

Malyarevich, Alexander M. and Gaponenko, Maxim S. and Savitski, Vasili G. and Yumashev, Konstantin V. and Rachkovskaya, Galina E. and Zakharevich, Galina B. (2007) Nonlinear optical properties of PbS quantum dots in boro-silicate glass. Journal of Non-Crystalline Solids, 353 (11-12). pp. 1195-1200. ISSN 0022-3093

Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, Sigurd (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338-340 (1 SPEC). pp. 732-735. ISSN 0022-3093

Hsu, P. I. and Gleskova, H. and Huang, M. and Suo, Z. and Wagner, S. and Sturm, J. C. (2002) Amorphous Si TFTs on plastically deformed spherical domes. Journal of Non-Crystalline Solids, 299-302 (Part 2). pp. 1355-1359. ISSN 0022-3093

Gleskova, H. and Wagner, S. and Suo, Z. (2000) a-Si:H thin film transistors after very high strain. Journal of Non-Crystalline Solids, 266-269 B. pp. 1320-1324. ISSN 0022-3093

Sefcik, J and Rankin, S E and Kirchner, S J and McCormick, A V (1999) Esterification, condensation, and deprotonation equilibria of trimethylsilanol. Journal of Non-Crystalline Solids, 258 (1-3). pp. 187-197. ISSN 0022-3093

Gleskova, H. and Wagner, S. and Shen, D. S. (1998) Photoresist-free fabrication process for a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 227-230 (PART 2). pp. 1217-1220. ISSN 0022-3093

Branz, H. M. and Bullock, J. N. and Asher, S. and Gleskova, Helena and Wagner, S. (1996) On the lack of observable light-induced hydrogen diffusion near room temperature. Journal of Non-Crystalline Solids, 198-200. pp. 441-444. ISSN 0022-3093

Wagner, S. and Gleskova, Helena and Nakata, J. (1996) Equilibration and stability in undoped amorphous silicon. Journal of Non-Crystalline Solids, 198-200. pp. 407-414. ISSN 0022-3093

Gleskova, Helena and Wagner, S. (1995) Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Journal of Non-Crystalline Solids, 190 (1-2). pp. 157-162. ISSN 0022-3093

Gleskova, H. and Bullock, J. N. and Wagner, S. (1993) Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. Journal of Non-Crystalline Solids, 164-166 (PART 1). pp. 183-186. ISSN 0022-3093

This list was generated on Sat Aug 15 00:50:37 2020 BST.