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Sun, H D and Clark, A H and Calvez, S and Dawson, M D and Shih, D K and Lin, H H (2005) Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87 (8). -. 081908. ISSN 0003-6951

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Kim, K.S. and Kim, T. and Park, Y.J. (2005) Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures. In: International Conference on Indium Phosphide and Related Materials, 2005-05-08 - 2005-05-12.

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Shih, D.K. and Lin, H.H. (2005) Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. In: International Conference on Indium Phosphide and Related Materials, 2005-05-08 - 2005-05-12.

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Qiu, Y.N. and Rorison, J.M. and Kim, K.S. and Kim, T. and Park, Y.J. (2005) Spectroscopic characterization of 1.3µm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 86 (9). 092106. ISSN 0003-6951

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Gilet, P. and Grenouillet, L. and Million, A. (2005) Investigation of phase-separated electronic states in 1.5 mu m GaInNAs/GaAs heterostructures by optical spectroscopy. Journal of Applied Physics, 97 (3). 033517. ISSN 0021-8979

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Kim, K.S. and Kim, T. and Park, Y.J. (2005) Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 87. pp. 1-3. 021903. ISSN 0003-6951

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Shih, D.K. and Lin, H.H. (2005) Photoluminescence characterization of mid-infrared inNxAs1-x/In0.53Ga0.47/InP multiquantum wells with various n contents. Applied Physics Letters, 87. 081908. ISSN 0003-6951

Sun, H.D. and Clark, A.H. and Liu, H.Y. and Hopkinson, M. and Calvez, S. and Dawson, M.D. (2004) Optical characteristics of 1.55µm GaInNAs multiple quantum wells. Applied Physics Letters, 85 (18). pp. 4013-4015. ISSN 0003-6951

Calvez, S. and Laurand, N. and Smith, S.A. and Clark, A.H. and Hopkins, J.M. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) 1.3-μm GaInNAs surface-normal devices. IEE Proceedings Optoelectronics, 151 (5). pp. 442-446. ISSN 1350-2433

Calvez, S. and Hopkins, J.M. and Smith, S.A. and Clark, A.H. and Macaluso, R. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. and Gundogdu, K. and Hall, K.C. and Boggess, T.F. (2004) GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3um device applications. Journal of Crystal Growth, 268 (3-4). pp. 457-465. ISSN 0022-0248

Clark, A.H. and Calvez, S. and Laurand, N. and Macaluso, R. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40 (7). 878 -883. ISSN 0018-9197

Calvez, S. and Laurand, N. and Smith, S.A. and Clark, A.H. and Hopkins, J.M. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Novel 1.3um GaInNAs surface-normal devices. In: European Materials Research Society 2004 Spring Meeting, 2004-05-24 - 2004-05-28.

Dawson, M.D. and Calvez, S. and Pessa, M. and Sun, H.D. and Hopkins, J.M. and Smith, S.A. and Clark, A.H. and Macaluso, R. and Jouhti, T. and Gundogdu, K. and Hall, K.C. and Boggess, T.F. (2003) GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications. In: ICMAT 2003, Symposium H, Compound Semiconductors in Electronic an d Optoelectronic Applications, 2003-12-07 - 2003-12-12.

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. IEEE, IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M.; (2003) 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246. ISBN 0-7803-7704-4

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2003) 1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier. Electronics Letters, 39 (1). pp. 100-102. ISSN 0013-5194

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2003) Diode-pumped 1.3um GaInNAs vertical-cavity semiconductor optical amplifier. In: Semiconductor and integrated opto-electronics conference (SOIE), 2003-04-14 - 2003-04-16.

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Pessa, M. (2002) Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures. In: 15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, 2002-11-10 - 2002-11-14.