Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy
Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. (2005) Investigation of phase-separated electronic states in 1.5µm GaInNAs/GaAs heterostructures by optical spectroscopy. Journal of Applied Physics, 97. pp. 1-5. 033517. ISSN 0021-8979 (https://doi.org/10.1063/1.1836856)
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Abstract
We report on the comparative electronic state characteristics of particular GaInNAs/GaAs quantum well structures that emit near 1.3 and 1.5 µm wavelength at room temperature. While the electronic structure of the 1.3 µm sample is consistent with a standard quantum well, the 1.5 µm sample demonstrate quite different characteristics. By using photoluminescence sPLd excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 µm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 µm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.
ORCID iDs
Sun, H.D., Clark, A.H., Calvez, S. and Dawson, M.D.
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Item type: Article ID code: 10032 Dates: DateEventJanuary 2005Published11 January 2005Published OnlineKeywords: optical spectroscopy, photonics, Physics, Physics and Astronomy(all) Subjects: Science > Physics Department: Faculty of Science > Physics > Institute of Photonics
Unknown DepartmentDepositing user: Strathprints Administrator Date deposited: 28 Sep 2011 10:06 Last modified: 25 May 2023 09:01 URI: https://strathprints.strath.ac.uk/id/eprint/10032