Luminescence spectroscopy of Eu-implanted zincblende GaN

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Roqan, I.S. and O'Donnell, K.P. and Trager-Cowan, C. and Hourahine, B. and Martin, R.W. and Lorenz, K. and Alves, E. and As, D.J. and Panfilova, M. and Watson, I.M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. Physica Status Solidi B, 245 (1). pp. 170-173. ISSN 0370-1972 (https://doi.org/10.1002/pssb.200743372)

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Abstract

Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The EU3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800 degrees C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN: Eu.

ORCID iDs

Roqan, I.S., O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Trager-Cowan, C. ORCID logoORCID: https://orcid.org/0000-0001-8684-7410, Hourahine, B. ORCID logoORCID: https://orcid.org/0000-0002-7667-7101, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Lorenz, K., Alves, E., As, D.J., Panfilova, M. and Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993;
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