RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals
Yakushev, Michael V. and Volkov, Vladimir A. and Mursakulov, Niyazi N. and Sabzaliyeva, Chimnaz E. and Martin, Robert W. (2016) RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals. Journal of Vacuum Science and Technology A, 34 (5). 051203. ISSN 0734-2101 (https://doi.org/10.1116/1.4961882)
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Abstract
Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar + -bombarded CuInSe 2 single crystal using Rutherford backscattering/channeling analysis. Ar + ions of 30 keV were implanted with doses in the range from 10 12 to 3 × 10 16 cm -2 at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stacking faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.
ORCID iDs
Yakushev, Michael V., Volkov, Vladimir A., Mursakulov, Niyazi N., Sabzaliyeva, Chimnaz E. and Martin, Robert W. ORCID: https://orcid.org/0000-0002-6119-764X;-
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Item type: Article ID code: 62361 Dates: DateEvent1 September 2016Published17 August 2016AcceptedSubjects: Science > Physics Department: University of Strathclyde > University of Strathclyde
Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > PhotonicsDepositing user: Pure Administrator Date deposited: 15 Nov 2017 11:51 Last modified: 11 Nov 2024 11:50 URI: https://strathprints.strath.ac.uk/id/eprint/62361