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Up a levelLorenz, K. and Wahl, U. and Alves, E. and Nogales, E and Dalmasso, S and Martin, R W and O'Donnell, K P and Wojdak, M and Braud, A and Monteiro, T and Wojtowicz, T and Ruterana, P and Ruffenach, S and Briot, O (2006) High temperature annealing of rare earth implanted GaN films : structural and optical properties. Optical Materials, 28 (6-7). pp. 750-758.
Lorenz, K. and Wahl, U. and Alves, E. and Dalmasso, S. and Martin, R.W. and O'Donnell, K.P. and Ruffenach, S. and Briot, O. (2005) High temperature annealing and optical activation of Eu implanted GaN. Applied Physics Letters, 85 (14). pp. 2712-2714. ISSN 0003-6951
Katchkanov, V and O'Donnell, KP and Dalmasso, S and Martin, RW and Braud, A and Nakanishi, Y and Wakahara, A and Yoshida, A (2005) Photoluminescence studies of Eu-implanted GaN epilayers. Physica Status Solidi B, 242 (7). pp. 1491-1496. ISSN 0370-1972
Dalmasso, S and Martin, R W and Edwards, P R and O'Donnell, K P and Pipeleers, B and Vantomme, A and Nakanishi, Y and Wakahara, A and Yoshida, A, RENiBEI Network (2003) Electron probe microanalysis of rare earth doped gallium nitride light emitters. Journal of Physics: Conference Series, 180. pp. 555-558. ISSN 1742-6596