Defect structures in (001) zincblende GaN/3CSiC nucleation layers
Vacek, Petr and Frentrup, Martin and Lee, Lok Yi and Massabuau, Fabien C.-P. and Kappers, Menno J. and Wallis, David J. and Groger, Roman and Oliver, Rachel A. (2021) Defect structures in (001) zincblende GaN/3CSiC nucleation layers. Journal of Applied Physics, 129 (15). 155306. ISSN 0021-8979 (https://doi.org/10.1063/5.0036366)
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Abstract
The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.
ORCID iDs
Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P. ORCID: https://orcid.org/0000-0003-1008-1652, Kappers, Menno J., Wallis, David J., Groger, Roman and Oliver, Rachel A.;-
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Item type: Article ID code: 76277 Dates: DateEvent21 April 2021Published20 April 2021Published Online5 April 2021AcceptedSubjects: Science > Physics
Science > Physics > Optics. LightDepartment: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 29 Apr 2021 14:16 Last modified: 12 Dec 2024 11:15 URI: https://strathprints.strath.ac.uk/id/eprint/76277