Ti alloyed α-Ga2O3 : route towards wide band gap engineering
Barthel, Armin and Roberts, Joseph and Napari, Mari and Frentrup, Martin and Huq, Tahmida and Kovács, András and Oliver, Rachel and Chalker, Paul and Sajavaara, Timo and Massabuau, Fabien (2020) Ti alloyed α-Ga2O3 : route towards wide band gap engineering. Micromachines, 11 (12). 1128. ISSN 2072-666X (https://doi.org/10.3390/mi11121128)
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Abstract
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1-x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼ 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga2O3.
ORCID iDs
Barthel, Armin, Roberts, Joseph, Napari, Mari, Frentrup, Martin, Huq, Tahmida, Kovács, András, Oliver, Rachel, Chalker, Paul, Sajavaara, Timo and Massabuau, Fabien ORCID: https://orcid.org/0000-0003-1008-1652;-
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Item type: Article ID code: 74941 Dates: DateEvent20 December 2020Published15 December 2020AcceptedSubjects: Science > Physics Department: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 17 Dec 2020 10:24 Last modified: 11 Nov 2024 12:56 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/74941