Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate

Chappell, George A. and Guilhabert, Benoit and Garcia, Thor and Zhao, Kuaile and Watson, Ian M. and Dawson, Martin D. and Tamargo, Maria C. and Hastie, Jennifer E. (2020) Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate. Optical Materials Express, 10 (12). pp. 3328-3341. ISSN 2159-3930 (https://doi.org/10.1364/OME.411613)

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Abstract

Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-pm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 |jm 2, similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ∼520 nm and a thermal redshift of 4 nm with ∼3.6 MWm −2 continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.

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