GaN-on-diamond technology platform : bonding-free membrane manufacturing process

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Smith, Matthew D. and Cuenca, Jerome A. and Field, Daniel E. and Fu, Yen-chun and Yuan, Chao and Massabuau, Fabien and Mandal, Soumen and Pomeroy, James W. and Oliver, Rachel A. and Uren, Michael J. and Elgaid, Khaled and Williams, Oliver A. and Thayne, Iain and Kuball, Martin (2020) GaN-on-diamond technology platform : bonding-free membrane manufacturing process. AIP Advances, 10 (3). 035306. ISSN 2158-3226 (https://doi.org/10.1063/1.5129229)

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Abstract

GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.

ORCID iDs

Smith, Matthew D., Cuenca, Jerome A., Field, Daniel E., Fu, Yen-chun, Yuan, Chao, Massabuau, Fabien ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Mandal, Soumen, Pomeroy, James W., Oliver, Rachel A., Uren, Michael J., Elgaid, Khaled, Williams, Oliver A., Thayne, Iain and Kuball, Martin;
  • Item type:Article
    ID code:71547
    Dates:
    Date
    Event
    3 March 2020
    Published
    3 March 2020
    Published Online
    10 February 2020
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:25 Feb 2020 10:21
    Last modified:18 Dec 2024 09:27
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/71547
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